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4N60G-X-TF1-T PDF预览

4N60G-X-TF1-T

更新时间: 2022-09-20 09:39:18
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
8页 392K
描述
4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

4N60G-X-TF1-T 数据手册

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4N60  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
Breakdown Voltage Variation vs.  
Temperature  
On-Resistance Junction Temperature  
3.0  
2.5  
2.0  
1.5  
1.2  
1.1  
1.0  
1.0  
Note:  
1. VGS=10V  
2. ID=4A  
0.9  
0.8  
Note:  
1. VGS=0V  
2. ID=250µA  
0.5  
0.0  
200  
0
-50  
200  
-100  
-50  
50  
100  
150  
-100  
0
50  
100  
150  
Junction Temperature, TJ С)  
Junction Temperature, TJ С)  
On-State Characteristics  
Transfer Characteristics  
VGS  
Top: 10V  
10  
10  
9V  
8V  
7V  
6V  
5.5V  
5 V Bottorm:5.0V  
25°С  
1
5.0V  
150°С  
1
0.1  
Notes:  
Notes:  
1. VDS=50V  
2. 250µs Pulse Test  
1. 250µs Pulse Test  
2. TC=25°С  
0.1  
2
4
6
8
10  
0.1  
1
10  
Gate-Source Voltage, VGS (V)  
Drain-to-Source Voltage, VDS (V)  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 8  
QW-R502-061,N  
www.unisonic.com.tw  

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