Datasheet > 4N60G-X-TF1-T

4N60G-X-TF1-T

更新时间： 2024-01-22 10:31:31

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
8页	392K
描述
4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

4N60G-X-TF1-T 数据手册

4N60

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

4N60-A

600

650

Drain-Source Voltage

V_DSS

4N60-B

Gate-Source Voltage

V_GSS

I_AR

±30

Avalanche Current (Note 2)

4.4

Continuous

I_D

4.0

Drain Current

Pulsed (Note 2)

I_DM

4N60

260

V/ns

Single Pulsed (Note 3)

E_AS

Avalanche Energy

4N60-E

200

Repetitive (Note 2)

E_AR

10.6

4.5

Peak Diode Recovery dv/dt (Note 4)

TO-220/TO-262/TO-263

dv/dt

106

TO-220F/TO-220F1

TO-251

Power Dissipation

P_D

TO-252

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

-55 ~ +150

°С

T_OPR

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 30mH, I_AS= 4A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

4. I_SD≤4.4A, di/dt ≤200A/μs, V_DD≤BV_DSS, Starting T_J= 25°C

THERMAL DATA

PARAMETER

PACKAGE

TO-220/TO-262/TO-263

TO-220F/TO-220F1

TO-251

SYMBOL

RATINGS

62.5

UNIT

°С/W

Junction to Ambient

Junction to Case

θ_JA

TO-252

TO-220/TO-262/TO-263

TO-220F/TO-220F1

TO-251

1.18

3.47

2.5

θ_Jc

TO-252

2.5

ELECTRICAL CHARACTERISTICS (T_C=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

4N60-A

4N60-B

600

650

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

BV_DSS

I_DSS

V_GS= 0 V, I_D= 250 μA

V_DS= 600 V, V_GS= 0 V

V_GS= 30 V, V_DS= 0 V

μA

Forward

Reverse

100 nA

-100 nA

I_GSS

V_GS= -30 V, V_DS= 0 V

Breakdown Voltage Temperature

Coefficient

△BV_DSS/△T

_JI_D= 250 μA, Referenced to 25°C

0.6

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250 μA

2.0

4.0

2.5

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS= 10 V, I_D= 2.2 A

Ω

C_ISS

C_OSS

C_RSS

520 670 pF

V_DS= 25 V, V_GS= 0 V, f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

UNISONIC TECHNOLOGIES CO., LTD

2 of 8

QW-R502-061,N

www.unisonic.com.tw

123 4 5 6 7 8

中文翻译

下载PDF

与4N60G-X-TF1-T相关器件

型号	品牌	获取价格	描述	数据表
4N60G-X-TF3-T	UTC	获取价格	4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
4N60G-X-TM3-T	UTC	获取价格	4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
4N60G-X-TN3-R	UTC	获取价格	4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
4N60G-X-TQ3-R	UTC	获取价格	4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
4N60G-X-TQ3-T	UTC	获取价格	4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
4N60-HC	UTC	获取价格	N-CH
4N60K	UTC	获取价格	4A, 600V N-CHANNEL POWER MOSFET
4N60KG-TA3-T	UTC	获取价格	N-CHANNEL JUNCTIN SILICON FET
4N60KG-TF1-T	UTC	获取价格	N-CHANNEL JUNCTIN SILICON FET
4N60KG-TF2-T	UTC	获取价格	N-CHANNEL JUNCTIN SILICON FET

与4N60G-X-TF1-T相关文章

LM317T数据手册解读：产品特性、应用、封装与引脚详解
2024-06-14

13
一文带你了解?DB3二极管好坏判断、参数信息、替代推荐
2024-06-14

14
LM358DR数据手册：引脚说明、电气参数及替换型号推荐
2024-06-14

8
OP07CP数据手册解读：引脚信息、电子参数
2024-06-14

13

产品中心

服务支持

精选活动

关于我们

帮助中心

4N60G-X-TF1-T

4N60G-X-TF1-T 数据手册

与4N60G-X-TF1-T相关器件

与4N60G-X-TF1-T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

4N60G-X-TF1-T

4N60G-X-TF1-T 数据手册

与4N60G-X-TF1-T相关器件

与4N60G-X-TF1-T相关文章

您还可以找

您在本页遇到什么问题？