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4N60KL-TMS2-T PDF预览

4N60KL-TMS2-T

更新时间: 2022-02-26 08:57:59
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
7页 241K
描述
N-CHANNEL JUNCTIN SILICON FET

4N60KL-TMS2-T 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
4N60K-MT  
Preliminary  
Power MOSFET  
4A, 600V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 4N60K-MT is a high voltage power MOSFET and is  
designed to have better characteristics, such as fast switching  
time, low gate charge, low on-state resistance and have a high  
rugged avalanche characteristics. This power MOSFET is usually  
used at high speed switching applications in power supplies, PWM  
motor controls, high efficient DC to DC converters and bridge  
circuits.  
FEATURES  
* RDS(ON) < 2.5@ VGS = 10 V, ID = 2.2 A  
* Fast Switching Capability  
* Avalanche Energy Specified  
* Improved dv/dt Capability, high Ruggedness  
SYMBOL  
www.unisonic.com.tw  
1 of 7  
Copyright © 2015 Unisonic Technologies Co., Ltd  
QW-R502-B30.e  

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种类:N-Channel;漏源电压(Vdss):650V;持续漏极电流(Id)(在25°C