Datasheet > 4N60KG-TMS2-T

4N60KG-TMS2-T

更新时间： 2024-11-29 00:44:31

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
7页	241K
描述
N-CHANNEL JUNCTIN SILICON FET

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4N60KG-TMS2-T 数据手册

UNISONIC TECHNOLOGIES CO., LTD

4N60K-MT

Preliminary

Power MOSFET

4A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 4N60K-MT is a high voltage power MOSFET and is

designed to have better characteristics, such as fast switching

time, low gate charge, low on-state resistance and have a high

rugged avalanche characteristics. This power MOSFET is usually

used at high speed switching applications in power supplies, PWM

motor controls, high efficient DC to DC converters and bridge

circuits.



FEATURES

* R_DS(ON)< 2.5Ω @ V_GS= 10 V, I_D= 2.2 A

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high Ruggedness



SYMBOL

www.unisonic.com.tw

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QW-R502-B30.e

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