Datasheet > 4N60G-X-TF1-T

4N60G-X-TF1-T

更新时间： 2022-09-20 09:39:18

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
8页	392K
描述
4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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中文翻译

获取价格

数据手册

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4N60G-X-TF1-T 数据手册

4N60

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

P. W.

V_GS

(Driver)

Period

P.W.

Period

10V

V_GS

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

V_DD

(D.U.T.)

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD

4 of 8

QW-R502-061,N

www.unisonic.com.tw

1 2 345 6 7 8

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