Datasheet > 4GBU2PBF

4GBU2PBF

更新时间： 2024-09-15 21:12:51

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网二极管
页数	文件大小	规格书
5页	123K
描述
Bridge Rectifier Diode, 1 Phase, 4A, 200V V(RRM), Silicon

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4GBU2PBF 数据手册

Preliminary Data Sheet rev. B I2717 12/00

4GBU Series

4.0 Amps Single Phase Full Wave

Bridge Rectifier

Features

I_O(AV)= 4A

V_RRM= 50/ 1200V

Diode chips are glass passivated

Suitable for Universal hole mounting

Easy to assemble & install on P.C.B.

High Surge Current Capability

High Isolation between terminals and molded case

Leads are suitable for high temperature

Soldering at 260°C for 8-10 seconds

UL evaluation is under process

Description

These GBU Series of Single Phase Bridges consist

of four glass passivated silicon junction connected

as a Full Wave Bridge. These four junctions are

encapsulated by plastic molding technique. These

Bridges are mainly used in Switch Mode power

supply and in industrial and consumer equipment.

Major Ratings and Characteristics

Parameters

4GBU

Units

I_O

@T_C

100

150

°C

I_FSM

@50Hz

@60Hz

@50Hz

@60Hz

158

113

A²s

I²t

104

4GBU

V_RRMrange

T_J

50 to 1200

- 55 to150

^oC

www.irf.com

12 3 4 5

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