Datasheet > 42S16400A

42S16400A

更新时间： 2024-11-02 22:15:15

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
55页	469K
描述
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

42S16400A 数据手册

IS42S16400A

ISSI

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT)

SYNCHRONOUS DYNAMIC RAM

April 2003

FEATURES

OVERVIEW

ISSI's64MbSynchronousDRAMIS42S16400Aisorganized

as 1,048,576 bits x 16-bit x 4-bank for improved

performance.ThesynchronousDRAMsachievehigh-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

• Clock frequency:166, 133, 100 MHz

• Fully synchronous; all signals referenced to a

positive clock edge

• Internal bank for hiding row access/precharge

• Single 3.3V power supply

• LVTTL interface

PIN CONFIGURATIONS

54-Pin TSOP (Type II)

• Programmable burst length

– (1, 2, 4, 8, full page)

VCC

I/O0

VCCQ

I/O1

I/O2

GNDQ

I/O3

I/O4

VCCQ

I/O5

I/O6

GNDQ

I/O7

VCC

LDQM

GND

I/O15

GNDQ

I/O14

I/O13

VCCQ

I/O12

I/O11

GNDQ

I/O10

I/O9

VCCQ

I/O8

GND

• Programmable burst sequence:

Sequential/Interleave

• Self refresh modes

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write

operations capability

UDQM

CLK

CKE

CAS

RAS

• Burst termination by burst stop and precharge

command

BA0

BA1

A10

A11

• Byte controlled by LDQM and UDQM

• Industrial temperature availability

(133MHz, 100MHz)

VCC

GND

• Package: 400-mil 54-pin TSOP II,

a lead-free package is available.

PIN DESCRIPTIONS

WriteEnable

A0-A11

BA0, BA1

I/O0 to I/O15

CLK

Address Input

LDQM

UDQM

Vcc

Lower Bye, Input/Output Mask

Upper Bye, Input/Output Mask

Power

Bank Select Address

Data I/O

System Clock Input

Clock Enable

GND

VccQ

GNDQ

Ground

CKE

Power Supply for I/O Pin

Ground for I/O Pin

NoConnection

Chip Select

RAS

RowAddressStrobeCommand

ColumnAddressStrobeCommand

CAS

liabilityarisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingon

anypublishedinformationandbeforeplacingordersforproducts.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

R e v . C

04/16/03

12 3 4 5 6 7...55

中文翻译

下载PDF

与42S16400A相关器件

型号	品牌	获取价格	描述	数据表
42S16800A	ISSI	获取价格	16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
42S16800L	NEC	获取价格	3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
42S16800L-A60	NEC	获取价格	3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
42S16800L-A70	NEC	获取价格	3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
42S16800L-A80	NEC	获取价格	3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
42S17800L	NEC	获取价格	3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
42S17800L-A60	NEC	获取价格	3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
42S17800L-A70	NEC	获取价格	3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
42S17800L-A80	NEC	获取价格	3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
42S32200	ISSI	获取价格	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

与42S16400A相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

11
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

5
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

28
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

26

产品中心

服务支持

精选活动

关于我们

帮助中心

42S16400A

42S16400A 数据手册

与42S16400A相关器件

与42S16400A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

42S16400A

42S16400A 数据手册

与42S16400A相关器件

与42S16400A相关文章

您还可以找

您在本页遇到什么问题？