Product Specification
PE4231
SPDT High Power UltraCMOS™
Product Description
DC – 1.3 GHz RF Switch
The PE4231 SPDT High Power UltraCMOS™ RF Switch is
designed to cover a broad range of applications from DC to 1.3
GHz. This single-supply reflective switch integrates on-board
CMOS control logic driven by a simple, single-pin CMOS or
TTL compatible control input. Using a nominal +3-volt power
supply, a typical input 1 dB compression point of +32 dBm can
be achieved. The PE4231 also exhibits input-output isolation of
better than 42 dB at 1.0 GHz and is offered in a small 8-lead
MSOP package.
Features
• Optimized for 75 Ω systems
• Single +3-volt power supply
• Low insertion loss: 0.80 dB at 1.0 GHz
• High isolation: 42 dB at 1.0 GHz
• Typical input 1 dB compression point of
+32 dBm
• Single-pin CMOS or TTL logic control
• Low cost
The PE4231 SPDT High Power UltraCMOS™ RF Switch is
manufactured in Peregrine’s patented Ultra Thin Silicon
(UTSi®) CMOS process, offering the performance of GaAs with
the economy and integration of conventional CMOS.
Figure 2. Package Type
Figure 1. Functional Diagram
8-lead MSOP
RFCommon
RF1
RF2
CMOS
Control
Driver
CTRL
Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 75 ꢀ)
Parameter
Conditions
Minimum
Typical
Maximum
Units
Operation Frequency1
DC
1300
0.60
0.90
MHz
50 MHz
0.50
Insertion Loss
dB
dB
dB
1000 MHz
50 MHz
0.80
75
73
Isolation – RFCommon to
RF1/RF2
1000 MHz
50 MHz
40
58
42
60
Isolation – RF1 to RF2
1000 MHz
1000 MHz
33
16
35
17
Return Loss
dB
ns
‘ON’ Switching Time
‘OFF’ Switching Time
Video Feedthrough2
Input 1 dB Compression3
Input IP33
CTRL to 0.1 dB final value, 2 GHz
CTRL to 25 dB isolation, 2 GHz
2000
900
15
ns
mVpp
dBm
dBm
1000 MHz
30
50
32
1000 MHz, 17 dBm
Notes:
1. Device linearity will begin to degrade below 1 MHz.
2. Measured with a 1 ns risetime, 0/3 V pulse and 500 MHz bandwidth.
3. Measured in a 50 ꢀ system.
Document No. 70-0097-01 │ www.psemi.com
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 7