Datasheet > 4124

4124

更新时间： 2024-09-15 03:00:39

品牌	Logo	应用领域
友顺 - UTC		晶体开关晶体管
页数	文件大小	规格书
3页	131K
描述
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS

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4124 数据手册

UTC 4124

NPN TRIPLE DIFFUSED SILICON TRANSISTOR

HIGH FREQUENCY SWITCHING

TRANSISTORS FOR BALLASTERS

DESCRIPTION

UTC 4124 is designed for specially used for electronic

ballasters in 110VAC environment.

FEATURES

* Triple diffused technology.

* High switching speed

TO-126

1: BASE 2: COLLECTOR 3: EMITTER

*Pb-free plating product number:4124L

ABSOLUTE MAXIMUM RATINGS

(Tc = 25℃)

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Peak Collector Current

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

400

200

1.5

Peak Collector Consume Dissipation

Peak Junction Temperature

Storage Temperature

P_C

T_J

T_STG

150

-40 ~ +150

℃

ELECTRICAL CHARACTERISTICS

(Ta = 25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

200

400

TYP

MAX

UNIT

Collector-Emitter Sustaining Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Collector-Emitter Cutoff Current

Emitter-Base Cutoff Current

V_{CEO (SUS)}I_C=10mA, I_B=0

V _{(BR) CBO}I_C=1mA, I_B=0

V _{(BR) EBO}I_E=1mA, I_C=0

I_CBO

I_CEO

I_EBO

h_{FE (1)}

h_{FE (2)}

V_CB=400V, I_E=0

V_CE=200V, I_B=0

V_EB=7V, Ic=0

100

0.5

1.2

0.7

µA

V_CE=10V, Ic=0.2A

V_CE=5V, Ic=1.5A

I_C=0.4A, I_B=0.1A

I_C=1.5A, I_B=0.5A

I_C=0.8A, I_B=0.2A

I_C=1A, I_B1= -I_B2= 0.2A

V_CE=10V, Ic=0.1A

DC Current Gain

µs

MHz

Collector-Emitter Saturation Voltage

V_{CE (sat)}

Base-Emitter Saturation Voltage

Fall Time

Storage Time

V_{BE (sat)}

f_T

Cut-off Frequency

UTC UNISONIC TECHNOLOGIES CO., LTD.

www.unisonic.com

QW-R204-019,A

12 3

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