Datasheet > 3PMT8.0CAE3

3PMT8.0CAE3

更新时间： 2024-10-30 19:49:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	217K
描述
Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-201, PLASTIC, POWERMITE-2

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技术参数
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3PMT8.0CAE3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-201	包装说明：	R-PSSO-G2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.79	最小击穿电压：	8.89 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-201	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	BIDIRECTIONAL	最大功率耗散：	5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	8 V
表面贴装：	YES	技术：	AVALANCHE
端子面层：	MATTE TIN	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

3PMT8.0CAE3 数据手册

3PMT5.0A thru 3PMT170A

POWERMITE^®

Low Profile 1500 Watt

S C O T T S D A L E D I V I S I O N

Transient Voltage Suppressor

DESCRIPTION

APPEARANCE

These 1500 watt transient voltage suppressors offer power-handling capabilities

only found in larger packages. They are most often used for protecting against

transients from inductive switching environments or induced secondary lightning

effects as found in lower surge levels of IEC61000-4-5. With very fast response

times, they are also effective in protection from ESD or EFT. Powermite^®package

features include a full-metallic bottom that eliminates the possibility of solder-flux

entrapment during assembly. They also provide unique locking tabs acting as an

integral heat sink. With its very short terminations, parasitic inductance is minimized

to reduce voltage overshoots during fast-rise-time transients.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Very low profile surface mount package (1.1mm)

•

Secondary lightning transient protection

Integral heat-sink-locking tabs

Inductive switching transient protection

Small footprint

Compatible with automatic insertion equipment

Full-metallic bottom eliminates flux entrapment

Voltage range 5 volts to 170 volts

Very low parasitic inductance for minimal

voltage overshoot

•

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively and

IEC61000-4-5 for surge levels defined herein

Available in both unidirectional or bidirectional

(CA suffix for bidirectional)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

1500 Watt peak pulse power (10 / 1000 µs)

Forward Surge Current: 200 Amps at 8.3 ms

(excluding bidirectional)

•

Terminals: All terminals are tin-lead plated

Polarity: Two-leads on side are internally connected

together for anode and backside is cathode

(unidirectional devices only)

•

Marking: Body marked with P/N without 3PMT

prefix

•

Repetition surge rate (duty factor): 0.01%

Thermal resistance: 2.5°C / watt junction to tab

130°C / watt junction to ambient with

recommended footprint

(ie. 5.0A, 5.0CA, 12A, 12CA, 170A, 170CA, etc.)

Molded epoxy package meets UL94V-0

Weight: 0.072 grams (approximate)

Tape & Reel packaging per EIA-481-2

(16 mm - 6000 units/reel)

•

Lead and mounting temperature: 260°C for 10 s

ELECTRICAL CHARACTERISTICS

BREAKDOWN

CLAMPING

VOLTAGE

V_C

PEAK PULSE

CURRENT

I_PP

STANDBY

CURRENT

I_D

TEMPERATURE

COEFFICIENT

OF V_BR

STANDOFF

VOLTAGE

V_BR

MICROSEMI

V_WM

@1 mA

@ I_PP

@ V_WM

PART NUMBER

(FIGURE 4)

VOLTS

MAX

(FIGURE 4)

AMPS

α_V(BR)

%/°C

MAX

VOLTS

MIN

µA

MAX

3PMT5.0A

3PMT6.0A

3PMT6.5A

3PMT7.0A

3PMT7.5A

3PMT8.0A

3PMT8.5A

3PMT9.0A

3PMT10A

3PMT11A

3PMT12A

6.5

7.5

8.5

9.0

6.40

6.67

7.22

7.78

8.33

8.89

9.94

10.0

11.1

12.2

13.3

9.2

163.0

145.6

133.9

125.0

116.3

110.3

104.2

97.4

1000

500

200

100

.057

.059

.061

.065

.067

.070

.073

.076

.078

.081

.082

10.3

11.2

12.0

12.9

13.6

14.4

15.4

17.0

18.2

19.9

88.2

82.4

75.3

Microsemi

Page 1

10-6-2003 REV B

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与3PMT8.0CAE3相关器件

型号	品牌	获取价格	描述	数据表
3PMT8.0CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Bidirectional, 1 Element, Silicon, PLAST
3PMT8.0E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
3PMT8.5	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, PL
3PMT8.5A	MICROSEMI	获取价格	POWERMITE Low Profile 1500 Watt Transient Voltage Suppressor
3PMT8.5AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, RO
3PMT8.5C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, PLA
3PMT8.5CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
3PMT8.5CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
3PMT8.5CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, PLA
3PMT8.5E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, PL

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