Datasheet > 3PMT8.5AE3

3PMT8.5AE3

更新时间： 2024-11-01 14:39:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
3页	142K
描述
Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE-3

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技术参数
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3PMT8.5AE3 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	R-PSSO-G2	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.66
Is Samacsys：	N	最小击穿电压：	9.94 V
击穿电压标称值：	9.9 V	外壳连接：	CATHODE
最大钳位电压：	14.4 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
最大非重复峰值反向功率耗散：	1500 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
认证状态：	Not Qualified	最大重复峰值反向电压：	8.5 V
子类别：	Transient Suppressors	表面贴装：	YES
技术：	AVALANCHE	端子面层：	MATTE TIN
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

3PMT8.5AE3 数据手册

3PMT5.0Ae3 thru 3PMT170Ae3

POWERMITE^®

Low Profile 1500 Watt Unidirectional

Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These 1500 watt unidirectional transient voltage suppressors offer power-handling

capabilities only found in larger packages. They are most often used for protecting

against transients from inductive switching environments or induced secondary

lightning effects as found in lower surge levels of IEC61000-4-5. With very fast

response times, they are also effective in protection from ESD or EFT. Powermite^®

package features include a full-metallic bottom that eliminates the possibility of

solder-flux entrapment during assembly. They also provide unique locking tabs

acting as an integral heat sink. With its very short terminations, parasitic inductance

is minimized to reduce voltage overshoots during fast-rise-time transients.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional Transient Voltage Suppressors with 5 to

•

Secondary lightning transient protection

Inductive switching transient protection

Small footprint

Very low parasitic inductance for minimal

voltage overshoot

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively and

IEC61000-4-5 for surge levels defined herein

170 Volt Working Peak Voltage (V_WM

)

•

Very low profile surface mount package (1.1mm)

Integral heat-sink-locking tabs

Compatible with automatic insertion equipment

Full-metallic bottom eliminates flux entrapment

Voltage range 5 volts to 170 volts

•

RoHS Compliant with “e3” suffix part number

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

1500 Watt peak pulse power (10 / 1000 μs)

Forward Surge Current: 200 Amps at 8.3 ms

Repetition surge rate (duty factor): 0.01%

Thermal resistance: 2.5°C / watt junction to tab

130°C / watt junction to ambient with

recommended footprint

•

Terminals: Copper with annealed matte-Tin plating

for RoHS Compliance solderable per MIL-STD-750

method 2026 (consult factory for Tin-Lead plating)

Polarity: Two-leads on side are internally connected

together for anode and backside is cathode

(unidirectional devices only)

Marking: Body marked with P/N and a dot suffix

without 3PMT prefix

(ie. 5.0A•, 12A•, 170A•, etc.)

•

Lead and mounting temperature: 260°C for 10 s

•

Molded epoxy package meets UL94V-0

Weight: 0.072 grams (approximate)

•

Tape & Reel packaging per EIA-481-2 with 16 mm

tape and 5000 units/13 inch reel

ELECTRICAL CHARACTERISTICS

BREAKDOWN

CLAMPING

VOLTAGE

V_C

PEAK PULSE

CURRENT

I_PP

STANDBY

CURRENT

I_D

TEMPERATURE

COEFFICIENT

OF V_BR

STANDOFF

VOLTAGE

V_BR

MICROSEMI

PART NUMBER

V_WM

@1 mA

@ I_PP

@ V_WM

(FIGURE 4)

VOLTS

MAX

(FIGURE 4)

AMPS

α_V(BR)

%/°C

MAX

VOLTS

MIN

µA

MAX

3PMT5.0Ae3

3PMT6.0Ae3

3PMT6.5Ae3

3PMT7.0Ae3

3PMT7.5Ae3

3PMT8.0Ae3

3PMT8.5Ae3

3PMT9.0Ae3

3PMT10Ae3

3PMT11Ae3

3PMT12Ae3

6.40

6.67

7.22

7.78

8.33

8.89

9.94

10.0

11.1

12.2

13.3

9.2

163.0

145.6

133.9

125.0

116.3

110.3

104.2

97.4

1000

500

200

100

.057

.059

.061

.065

.067

.070

.073

.076

.078

.081

.082

10.3

11.2

12.0

12.9

13.6

14.4

15.4

17.0

18.2

19.9

6.5

7.5

8.5

9.0

88.2

82.4

75.3

8-22-2005 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与3PMT8.5AE3相关器件

型号	品牌	获取价格	描述	数据表
3PMT8.5C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, PLA
3PMT8.5CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
3PMT8.5CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
3PMT8.5CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, PLA
3PMT8.5E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, PL
3PMT85	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 85V V(RWM), Unidirectional, 1 Element, Silicon, PLA
3PMT85A	MICROSEMI	获取价格	POWERMITE Low Profile 1500 Watt Transient Voltage Suppressor
3PMT85AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 85V V(RWM), Unidirectional, 1 Element, Silicon, ROH
3PMT85C	MICROSEMI	获取价格	暂无描述
3PMT85CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 85V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

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