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3PMT8.5AE3 PDF预览

3PMT8.5AE3

更新时间： 2024-09-13 14:39:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
3页 142K
描述
Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE-3

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3PMT8.5AE3 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.66
Is Samacsys：N最小击穿电压：9.94 V
击穿电压标称值：9.9 V外壳连接：CATHODE
最大钳位电压：14.4 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
认证状态：Not Qualified最大重复峰值反向电压：8.5 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

3PMT8.5AE3 数据手册

 浏览型号3PMT8.5AE3的Datasheet PDF文件第2页浏览型号3PMT8.5AE3的Datasheet PDF文件第3页 
3PMT5.0Ae3 thru 3PMT170Ae3  
POWERMITE®  
Low Profile 1500 Watt Unidirectional  
Transient Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These 1500 watt unidirectional transient voltage suppressors offer power-handling  
capabilities only found in larger packages. They are most often used for protecting  
against transients from inductive switching environments or induced secondary  
lightning effects as found in lower surge levels of IEC61000-4-5. With very fast  
response times, they are also effective in protection from ESD or EFT. Powermite®  
package features include a full-metallic bottom that eliminates the possibility of  
solder-flux entrapment during assembly. They also provide unique locking tabs  
acting as an integral heat sink. With its very short terminations, parasitic inductance  
is minimized to reduce voltage overshoots during fast-rise-time transients.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Unidirectional Transient Voltage Suppressors with 5 to  
•
•
•
•
Secondary lightning transient protection  
Inductive switching transient protection  
Small footprint  
Very low parasitic inductance for minimal  
voltage overshoot  
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively and  
IEC61000-4-5 for surge levels defined herein  
170 Volt Working Peak Voltage (VWM  
)
•
•
•
•
•
•
Very low profile surface mount package (1.1mm)  
Integral heat-sink-locking tabs  
Compatible with automatic insertion equipment  
Full-metallic bottom eliminates flux entrapment  
Voltage range 5 volts to 170 volts  
•
RoHS Compliant with “e3” suffix part number  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
•
•
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
1500 Watt peak pulse power (10 / 1000 μs)  
Forward Surge Current: 200 Amps at 8.3 ms  
Repetition surge rate (duty factor): 0.01%  
Thermal resistance: 2.5°C / watt junction to tab  
130°C / watt junction to ambient with  
recommended footprint  
•
•
•
Terminals: Copper with annealed matte-Tin plating  
for RoHS Compliance solderable per MIL-STD-750  
method 2026 (consult factory for Tin-Lead plating)  
Polarity: Two-leads on side are internally connected  
together for anode and backside is cathode  
(unidirectional devices only)  
Marking: Body marked with P/N and a dot suffix  
without 3PMT prefix  
(ie. 5.0A•, 12A•, 170A•, etc.)  
•
Lead and mounting temperature: 260°C for 10 s  
•
•
Molded epoxy package meets UL94V-0  
Weight: 0.072 grams (approximate)  
•
Tape & Reel packaging per EIA-481-2 with 16 mm  
tape and 5000 units/13 inch reel  
ELECTRICAL CHARACTERISTICS  
BREAKDOWN  
CLAMPING  
VOLTAGE  
VC  
PEAK PULSE  
CURRENT  
IPP  
STANDBY  
CURRENT  
ID  
TEMPERATURE  
COEFFICIENT  
OF VBR  
STANDOFF  
VOLTAGE  
VOLTAGE  
VBR  
MICROSEMI  
PART NUMBER  
VWM  
@1 mA  
@ IPP  
@ VWM  
(FIGURE 4)  
VOLTS  
MAX  
(FIGURE 4)  
AMPS  
αV(BR)  
%/°C  
MAX  
VOLTS  
VOLTS  
MIN  
µA  
MAX  
3PMT5.0Ae3  
3PMT6.0Ae3  
3PMT6.5Ae3  
3PMT7.0Ae3  
3PMT7.5Ae3  
3PMT8.0Ae3  
3PMT8.5Ae3  
3PMT9.0Ae3  
3PMT10Ae3  
3PMT11Ae3  
3PMT12Ae3  
5
6
6.40  
6.67  
7.22  
7.78  
8.33  
8.89  
9.94  
10.0  
11.1  
12.2  
13.3  
9.2  
163.0  
145.6  
133.9  
125.0  
116.3  
110.3  
104.2  
97.4  
1000  
1000  
500  
200  
100  
50  
.057  
.059  
.061  
.065  
.067  
.070  
.073  
.076  
.078  
.081  
.082  
10.3  
11.2  
12.0  
12.9  
13.6  
14.4  
15.4  
17.0  
18.2  
19.9  
6.5  
7
7.5  
8
8.5  
9.0  
10  
11  
12  
25  
10  
88.2  
5
82.4  
5
75.3  
5
Copyright © 2005  
8-22-2005 REV D  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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 		暂无描述
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