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3PMT9.0 PDF预览

3PMT9.0

更新时间： 2024-10-30 21:22:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
3页 211K
描述
Trans Voltage Suppressor Diode, 1500W, 9V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-3

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3PMT9.0 技术参数

是否Rohs认证：不符合生命周期：Obsolete
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.87
Is Samacsys：N最小击穿电压：10 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：R-PSSO-G2
JESD-609代码：e0湿度敏感等级：1
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
认证状态：Not Qualified最大重复峰值反向电压：9 V
表面贴装：YES技术：AVALANCHE
端子面层：TIN LEAD端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

3PMT9.0 数据手册

 浏览型号3PMT9.0的Datasheet PDF文件第2页浏览型号3PMT9.0的Datasheet PDF文件第3页 
3PMT5.0A thru 3PMT170A  
POWERMITE®  
Low Profile 1500 Watt  
S C O T T S D A L E D I V I S I O N  
Transient Voltage Suppressor  
DESCRIPTION  
APPEARANCE  
These 1500 watt transient voltage suppressors offer power-handling capabilities  
only found in larger packages. They are most often used for protecting against  
transients from inductive switching environments or induced secondary lightning  
effects as found in lower surge levels of IEC61000-4-5. With very fast response  
times, they are also effective in protection from ESD or EFT. Powermite® package  
features include a full-metallic bottom that eliminates the possibility of solder-flux  
entrapment during assembly. They also provide unique locking tabs acting as an  
integral heat sink. With its very short terminations, parasitic inductance is minimized  
to reduce voltage overshoots during fast-rise-time transients.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
Very low profile surface mount package (1.1mm)  
•
•
•
•
Secondary lightning transient protection  
Integral heat-sink-locking tabs  
Inductive switching transient protection  
Small footprint  
Compatible with automatic insertion equipment  
Full-metallic bottom eliminates flux entrapment  
Voltage range 5 volts to 170 volts  
Very low parasitic inductance for minimal  
voltage overshoot  
•
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively and  
IEC61000-4-5 for surge levels defined herein  
Available in both unidirectional or bidirectional  
(CA suffix for bidirectional)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
1500 Watt peak pulse power (10 / 1000 µs)  
Forward Surge Current: 200 Amps at 8.3 ms  
(excluding bidirectional)  
•
•
Terminals: All terminals are tin-lead plated  
Polarity: Two-leads on side are internally connected  
together for anode and backside is cathode  
(unidirectional devices only)  
•
Marking: Body marked with P/N without 3PMT  
prefix  
•
•
Repetition surge rate (duty factor): 0.01%  
Thermal resistance: 2.5°C / watt junction to tab  
130°C / watt junction to ambient with  
recommended footprint  
(ie. 5.0A, 5.0CA, 12A, 12CA, 170A, 170CA, etc.)  
Molded epoxy package meets UL94V-0  
Weight: 0.072 grams (approximate)  
Tape & Reel packaging per EIA-481-2  
(16 mm - 6000 units/reel)  
•
•
•
•
Lead and mounting temperature: 260°C for 10 s  
ELECTRICAL CHARACTERISTICS  
BREAKDOWN  
CLAMPING  
VOLTAGE  
VC  
PEAK PULSE  
CURRENT  
IPP  
STANDBY  
CURRENT  
ID  
TEMPERATURE  
COEFFICIENT  
OF VBR  
STANDOFF  
VOLTAGE  
VOLTAGE  
VBR  
MICROSEMI  
VWM  
@1 mA  
@ IPP  
@ VWM  
PART NUMBER  
(FIGURE 4)  
VOLTS  
MAX  
(FIGURE 4)  
AMPS  
αV(BR)  
%/°C  
MAX  
VOLTS  
VOLTS  
MIN  
µA  
MAX  
3PMT5.0A  
3PMT6.0A  
3PMT6.5A  
3PMT7.0A  
3PMT7.5A  
3PMT8.0A  
3PMT8.5A  
3PMT9.0A  
3PMT10A  
3PMT11A  
3PMT12A  
5
6
6.5  
7
7.5  
8
8.5  
9.0  
10  
11  
12  
6.40  
6.67  
7.22  
7.78  
8.33  
8.89  
9.94  
10.0  
11.1  
12.2  
13.3  
9.2  
163.0  
145.6  
133.9  
125.0  
116.3  
110.3  
104.2  
97.4  
1000  
1000  
500  
200  
100  
50  
25  
10  
5
5
.057  
.059  
.061  
.065  
.067  
.070  
.073  
.076  
.078  
.081  
.082  
10.3  
11.2  
12.0  
12.9  
13.6  
14.4  
15.4  
17.0  
18.2  
19.9  
88.2  
82.4  
75.3  
5
Copyright 2003  
Microsemi  
Page 1  
10-6-2003 REV B  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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3PMT9.0AE3 MICROSEMI

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3PMT9.0CAE3 MICROSEMI

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3PMT9.0E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 9V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
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 		Trans Voltage Suppressor Diode, 1500W, 90V V(RWM), Unidirectional, 1 Element, Silicon, PLA
3PMT90A MICROSEMI

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 		POWERMITE Low Profile 1500 Watt Transient Voltage Suppressor
3PMT90AE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 90V V(RWM), Unidirectional, 1 Element, Silicon, ROH
3PMT90C MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 90V V(RWM), Bidirectional, 1 Element, Silicon, PLAS

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