Datasheet > 3N50KG-TN3-R

3N50KG-TN3-R

更新时间： 2024-11-14 00:44:35

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
7页	297K
描述
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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3N50KG-TN3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

3N50K-MK

Power MOSFET

3A, 500V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 3N50K-MK is an N-channel mode power MOSFET

using UTC’s advanced technology to provide customers with planar

stripe and DMOS technology. This technology allows a minimum

on-state resistance and superior switching performance. It also can

withstand high energy pulse in the avalanche and commutation

mode.

The UTC 3N50K-MK is generally applied in high efficiency switch

mode power supplies, active power factor correction and electronic

lamp ballasts based on half bridge topology.



FEATURES

* R_DS(ON)< 3.2Ω @ V_GS= 10V, I_D= 1.5A

* High Switching Speed

* 100% Avalanche Tested



SYMBOL

2.Drain

1.Gate

3.Source

www.unisonic.com.tw

1 of 7

QW-R205-036.B

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
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3N50KL-TF3-T	UTC	获取价格	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
3N50KL-TM3-T	UTC	获取价格	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
3N50KL-TMS2-T	UTC	获取价格	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
3N50KL-TMS4-T	UTC	获取价格	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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