5秒后页面跳转
3N50KL-MK-TMS4-T PDF预览

3N50KL-MK-TMS4-T

更新时间: 2024-11-13 20:54:23
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
7页 291K
描述
Power Field-Effect Transistor

3N50KL-MK-TMS4-T 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

3N50KL-MK-TMS4-T 数据手册

 浏览型号3N50KL-MK-TMS4-T的Datasheet PDF文件第2页浏览型号3N50KL-MK-TMS4-T的Datasheet PDF文件第3页浏览型号3N50KL-MK-TMS4-T的Datasheet PDF文件第4页浏览型号3N50KL-MK-TMS4-T的Datasheet PDF文件第5页浏览型号3N50KL-MK-TMS4-T的Datasheet PDF文件第6页浏览型号3N50KL-MK-TMS4-T的Datasheet PDF文件第7页 
UNISONIC TECHNOLOGIES CO., LTD  
3N50K-MK  
Power MOSFET  
3A, 500V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 3N50K-MK is an N-channel mode power MOSFET  
using UTC’s advanced technology to provide customers with planar  
stripe and DMOS technology. This technology allows a minimum  
on-state resistance and superior switching performance. It also can  
withstand high energy pulse in the avalanche and commutation  
mode.  
The UTC 3N50K-MK is generally applied in high efficiency switch  
mode power supplies, active power factor correction and electronic  
lamp ballasts based on half bridge topology.  
FEATURES  
* RDS(ON) < 3.2@ VGS = 10V, ID = 1.5A  
* High Switching Speed  
* 100% Avalanche Tested  
SYMBOL  
2.Drain  
1.Gate  
3.Source  
www.unisonic.com.tw  
1 of 7  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R205-036.B  

与3N50KL-MK-TMS4-T相关器件

型号 品牌 获取价格 描述 数据表
3N50KL-TA3-T UTC

获取价格

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
3N50KL-TF1-T UTC

获取价格

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
3N50KL-TF2-T UTC

获取价格

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
3N50KL-TF3-T UTC

获取价格

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
3N50KL-TM3-T UTC

获取价格

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
3N50KL-TMS2-T UTC

获取价格

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
3N50KL-TMS4-T UTC

获取价格

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
3N50KL-TMS-T UTC

获取价格

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
3N50KL-TN3-R UTC

获取价格

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
3N50KL-TND-R UTC

获取价格

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR