MATCHING CHARACTERISTICS 3N165
LIMITS
SYMBOL
Gfs1/Gfs2
VGS1-2
CHARACTERISTIC
MIN. MAX. UNITS
CONDITIONS
Forward Transconductance Ratio
Gate Source Threshold Voltage Differential
0.90
--
1.0
VDS=-15V ID=-500 µA f=1kHz VSB=0V
VDS=-15V ID=-500 µA VSB=0V
100
mV
ΔVGS1-2/ΔT Gate Source Threshold Voltage Differential
--
100 µV/ºC VDS=-15V ID=-500 µA VSB=0V
TA=-55ºC to = +125ºC
Change with Temperature
TYPICAL SWITCHING WAVEFORM
INPUT PULSE
Rise Time≤2ns
Pulse Width≥200ns
SAMPLING SCOPE
Tr≤0.2ns
CIN≤2pF
RIN≥10M
Typical Switching Time Test Circuit
NOTES:
1. MOS field effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To
avoid possible damage to the device while wiring, testing, or in actual operation, follow these procedures:
To avoid the build-up of static charge, the leads of the devices should remain shorted together with a metal ring except when being tested
or used. Avoid unnecessary handling. Pick up devices by the case instead of the leads. Do not insert or remove devices from circuits
with the power on, as transient voltages may cause permanent damage to the devices.
2. Per transistor.
3. For design reference only, not 100% tested.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
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Doc 201138 06/26/2013 Rev#A6 ECN# 3N165 3N166