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3CN00149AA

更新时间： 2024-09-15 23:21:03
品牌 Logo 应用领域
其他 - ETC 光电
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2页 80K
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Optoelectronic

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3CN00149AA 数据手册

 浏览型号3CN00149AA的Datasheet PDF文件第2页 
Alca te l 1916 LMM  
2.5 Gb it/ s d ig ita l La se r Mod ule with  
in te g ra te d e le ctro-a b sorp tion Mod ula tor  
•
•
•
Very low dispersion penalty over 750km for  
2.5 Gbit/s operation  
InGaAsP monolithically integrated DFB laser and  
modulator chip  
High frequency butterfly package with  
50 Ω RF impedance matching and DC bias RF  
filtering  
Low drive voltage (≤ 2 Vpp)  
Internal optical isolator  
De scrip tion  
This Alcatel 1916 LMM contains an Alcatel  
DFB laser with monolithically integrated  
electro-absorption modulator (ILM). This  
chip provides much lower dispersion  
penalties than a directly modulated DFB,  
without the complexity of LiNbO3 external  
modulators. The Alcatel 1916 LMM is  
optimized for ultra long-haul transmission  
systems using non-dispersion shifted and  
optical fiber amplifiers.  
•
•
•
High power available  
Ap p lica tion s  
•
STM-16 and OC-48 ultra long-haul  
transmission systems  
Fe a ture s  
•
Terminals for submarine transmission systems  
•
Industry-standard 14-pin butterfly package  
Op tica l ch a ra cte ristics  
Pa ra m e te r  
Sym b .  
Con d ition s  
Min  
Typ ica l Ma x  
Un its  
mA  
mA  
dBm  
V
V
V
dB  
nm  
dB  
Threshold current  
Operating current  
Optical output power  
Laser forward voltage  
Modulator bias voltage  
Modulator drive voltage  
Dynamic extinction ratio  
Emission wavelength  
Side mode suppression  
Cut off frequency  
I
CW, V = 0 V  
5
50  
0
17  
80  
35  
100  
th  
bias  
Iop  
PAVE  
CW, V = 0 V  
bias  
Iop, Vmod, [1]  
V
CW, Iop, V = 0 V  
2
0
2
F
bias  
V
See [1]  
See [1]  
See [1]  
- 2  
- 1  
1
bias  
Vmod  
DER  
λm  
SMSR  
S21  
S11  
∆s  
10  
1530  
35  
4
10  
1570  
@ Iop  
- 3 dB  
DC to 3 GHz  
GHz  
dB  
dB  
RF return loss  
Dispersion penalty  
Tracking error  
11  
See [1], [2]  
Tsubmount = 25 °C, Tcase = 70°C  
If = 100 mA, Q = 10 log [P(70 °C)/P(25 °C)]  
2
0.5  
TR  
- 0.5  
dB  
Rise time / Fall time  
Optical return loss  
Monitor diode current  
Dark current  
TEC current  
TEC voltage  
Tr/Tf  
Ol  
Im  
[1], 10%, 90%  
Tc = - 5 to 70 °C  
Iop, VM = - 5 V  
70  
125  
ps  
dB  
mA  
µA  
A
25  
0.2  
0.5  
1.5  
0.1  
1.2  
Id  
∆T= 45 °C, Iop= 120 mA, TC= 70 °C, Vbias= - 1 V  
∆T= 45 °C, Iop= 120 mA, TC= 70 °C, Vbias= - 1 V  
I
1
1.6  
t
V
t
2.4  
V
Thermistor resistance  
R
TH  
9.5  
10.5  
KΩ  
Notes : All limits start of life, Tcase = 25 °C, Tsubmount = 25 °C, monitor bias = - 5 V, unless otherwise stated.  
[1] BER = 10-10; 2.488 Gbit/s modulation; 223-1 PRBS; NZR line code; DER≥10dB  
[2] 7200 ps/nm dispersion, assuming fiber with an average dispersion of 18 ps/nm/km  
Ab solute m a xim um ra tin g s  
Pa ra m e te rs  
Min  
- 5  
Ma x  
70  
Un it  
°C  
°C  
mA  
V
Operating case temperature  
Storage temperature  
-40  
85  
Laser forward current  
Laser reverse voltage  
150  
2
Modulator forward voltage  
Modulator reverse voltage  
Photodiode forward current  
Photodiode reverse voltage  
TEC Voltage  
1
V
5
V
1
mA  
V
20  
2.8  
1.4  
500  
2000  
10  
V
TEC Current  
A
ESD applied on modulator  
ESD applied on laser [1]  
Lead soldering time (at 260°C)  
Packing Mounting Screw Torque  
V
V
s
0.2  
nm  
[1] Human body model Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.  
12

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