Datasheet > 33C108RPF1I-20

33C108RPF1I-20

更新时间： 2024-10-30 21:00:59

品牌	Logo	应用领域
麦斯威 - MAXWELL		静态存储器内存集成电路
页数	文件大小	规格书
13页	269K
描述
Standard SRAM

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技术参数
数据手册

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33C108RPF1I-20 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.92
内存集成电路类型：	STANDARD SRAM	Base Number Matches：	1

33C108RPF1I-20 数据手册

33C108

1 Megabit (128K x 8-Bit)

CMOS SRAM

33C108

Logic Diagram

EATURES

ESCRIPTION

•

AD-PAK® Technology radiation-hardened against natural

Maxwell Technologies’ 33C108 high-density 1Megabit SRAM

microcircuit features a greater than 100 krad (Si) total dose

tolerance, depending upon space mission. Using Maxwell’s

radiation-hardened RAD-PAK® packaging technology, the

33C108 realizes a high density, high performance, and low

power consumption. Its fully static design eliminates the need

for external clocks, while the CMOS circuitry reduces power

consumption and provides higher reliability. The 33C108 is

equipped with eight common input/output lines, chip select

and output enable, allowing for greater system flexibility and

eliminating bus contention. The 33C108 features the same

advanced 128K x 8-bit SRAM, high-speed, and low-power

demand as the commercial counterpart.

space radiation

128K x 8 bit organization

•

Total dose hardness:

- > 100 krad (Si), depending upon space mission

Excellent Single Event Effect

- SEL_TH: > 101 MeV/mg/cm²

- SEU_TH: = 3 MeV/mg/cm²

•

- SEU saturated cross section: 6E-9 cm²/bit

Package:

•

- 32-Pin R^AD-PAK® flat pack

Fast access time:

- 20, 25, 30 ns maximum times available

Single 5.0V + 10% power supply

Fully static operation

Maxwell Technologies' patented RAD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit pack-

age. It eliminates the need for box shielding while providing

the required radiation shielding for a lifetime in orbit or space

mission. In a GEO orbit, RAD-PAK® provides greater than 100

krad (Si) radiation dose tolerance. This product is available

with screening up to Class S.

•

- No clock or refresh required

Three state outputs

TTL compatible inputs and outputs

Low power:

•

- Standby: 60 mA (TTL); 10 mA (CMOS)

- Operation: 180 mA (20 ns); 170 mA (25 ns);

160 mA (30 ns)

03.28.08 Rev 3

All data sheets are subject to change without notice

(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com

12 3 4 5 6 7...13

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与33C108RPF1I-20相关器件

型号	品牌	获取价格	描述	数据表
33C108RPF1I-30	MAXWELL	获取价格	暂无描述
33C108RPF2B-20	MAXWELL	获取价格	Standard SRAM
33C108RPF2B-30	MAXWELL	获取价格	Standard SRAM
33C108RPF2I-20	MAXWELL	获取价格	Standard SRAM
33C408	MAXWELL	获取价格	4 Megabit (512K x 8-Bit) CMOS SRAM
33C408RPFB-20	MAXWELL	获取价格	4 Megabit (512K x 8-Bit) CMOS SRAM
33C408RPFB-25	MAXWELL	获取价格	4 Megabit (512K x 8-Bit) CMOS SRAM
33C408RPFB-30	MAXWELL	获取价格	4 Megabit (512K x 8-Bit) CMOS SRAM
33C408RPFE-20	MAXWELL	获取价格	4 Megabit (512K x 8-Bit) CMOS SRAM
33C408RPFE-25	MAXWELL	获取价格	4 Megabit (512K x 8-Bit) CMOS SRAM

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