33C408RTFB-30

更新时间： 2024-10-29 22:13:23

品牌	Logo	应用领域
麦斯威 - MAXWELL		静态存储器
页数	文件大小	规格书
12页	233K
描述
4 Megabit (512K x 8-Bit) CMOS SRAM

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数据手册

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33C408RTFB-30 数据手册

33C408

4 Megabit (512K x 8-Bit)

CMOS SRAM

Logic Diagram

FEATURES:

DESCRIPTION:

• RAD-PAK® Technology radiation-hardened

against natural space radiation

• 524,288 x 8 bit organization

Maxwell Technologies’ 33C408 high-density 4

Megabit SRAM microcircuit features a greater than

100 krad (Si) total dose tolerance, depending upon

space mission. Using Maxwell’s radiation-hard-

ened R^AD-PAK® packaging technology, the 33C408

realizes a high density, high performance, and low

power consumption. Its fully static design elimi-

nates the need for external clocks, while the

CMOS circuitry reduces power consumption and

provides higher reliability. The 33C408 is equipped

with eight common input/output lines, chip select

and output enable, allowing for greater system flex-

ibility and eliminating bus contention. The 33C408

features the same advanced 512K x 8-bit SRAM,

high-speed, and low-power demand as the com-

mercial counterpart.

· Total dose hardness:

- > 100 krad (Si), depending upon space mis-

sion

• Excellent Single Event Effect

· - SEL_TH: > 68 MeV/mg/cm²

· - SEU_TH: = 3 MeV/mg/cm²

- SEU saturated cross section: 6E-9 cm²/bit

• Package:

- 32-Pin R^AD-PAK® flat pack

- 32-Pin Non-RAD-PAK® flat pack

• Fast access time:

- 20, 25, 30 ns maximum times available

• Single 5V + 10% power supply

• Fully static operation

Maxwell Technologies' patented R^AD-PAK packag-

ing technology incorporates radiation shielding in

the microcircuit package. It eliminates the need for

box shielding while providing the required radiation

shielding for a lifetime in orbit or space mission. In

a GEO orbit, R^AD-PAK provides greater than 100

krad (Si) radiation dose tolerance. This product is

available with screening up to Class S.

- No clock or refresh required

• Three state outputs

• TTL compatible inputs and outputs

• Low power:

- Standby: 60 mA (TTL); 10 mA (CMOS)

- Operation: 180 mA (20 ns); 170 mA (25 ns);

160 mA (30 ns)

04.16.02 REV 8

All data sheets are subject to change without notice

(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com

12 3 4 5 6 7...12

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