Datasheet > 324H4

324H4

更新时间： 2024-09-15 23:20:47

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
2页	34K
描述
Infrared Emitting Diodes (IRED)

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324H4 数据手册

GaAlAs T-1 PACKAGE

INFRARED EMITTING DIODE

MIE-324H4

Description

Package Dimensions

Unit : mm (inches )

The MIE-324H4 is a GaAlAs infrared LED having a

peak wavelength at 850nm. It features ultra-high power,

high response speed and molded package with higher

radiant intensity. In addition to improving the S/N ratio

in applied optical systems, the MIE-324H4 has greatly

improved long-distance characteristics as well as sign-

ificantly increased its range of applicability .

f 3.50±0.25

(.138±.010)

f 3.10±0.20

(.122±.008)

4.10±0.20

(.161

5.20±0.30

4.00

(.205±.012)

(.157

SEE NOTE

24.00MIN

0.50 TYP.

1.00MIN

(.020)

Features

(.040)

l Ultra-High radiant intensity

l High response speed

2.54NOM.

(.100)

SEE NOTE 3

l Standard T-1 ( f 3mm ) package, radiant angle : 40°

l Peak wavelength l _p= 850 nm

Notes :

1. Tolerance is ±0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

@ T_A=25^oC

Parameter

Power Dissipation

Maximum Rating

Unit

120

Peak Forward Current(300pps,10ms pulse)

Continuos Forward Current

Reverse Voltage

100

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

02/04/2002

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