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31GF6/100 PDF预览

31GF6/100

更新时间: 2024-11-10 09:05:27
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 175K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2

31GF6/100 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-201AD包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.56其他特性:FREE WHEELING DIODE
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e0
最大非重复峰值正向电流:90 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.03 µs
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED

31GF6/100 数据手册

 浏览型号31GF6/100的Datasheet PDF文件第2页浏览型号31GF6/100的Datasheet PDF文件第3页浏览型号31GF6/100的Datasheet PDF文件第4页 
31GF6  
Vishay General Semiconductor  
Ultrafast Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
3.0 A  
600 V  
90 A  
30 ns  
1.6 V  
150 °C  
VF  
Tj max.  
DO-201AD  
Features  
Typical Applications  
• Glass passivated chip junction  
• Ultrafast reverse recovery time  
• Low forward voltage drop  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
For use in high frequency rectification and freewheel-  
ing application in switching mode converters and  
inverters for consumer, computer and Telecommuni-  
cation  
Mechanical Data  
Case: DO-201AD  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
Polarity: Color band denotes cathode end  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbol  
VRRM  
Value  
600  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
420  
600  
3.0  
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current,  
0.375" (9.5 mm) lead length at TL = 110 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
90  
A
Operating junction and storage temperature range  
Reverse Avalanche Energy (8/20 µs surge)  
TJ, TSTG  
EAR  
- 40 to + 150  
10  
°C  
mJ  
Document Number 88530  
21-Jul-05  
www.vishay.com  
1

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