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31GF6-M3/54 PDF预览

31GF6-M3/54

更新时间: 2024-10-30 21:01:11
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 75K
描述
DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

31GF6-M3/54 技术参数

生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.67
其他特性:FREE WHEELING DIODE应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:90 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.03 µs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

31GF6-M3/54 数据手册

 浏览型号31GF6-M3/54的Datasheet PDF文件第2页浏览型号31GF6-M3/54的Datasheet PDF文件第3页浏览型号31GF6-M3/54的Datasheet PDF文件第4页 
31GF6-M3  
Vishay General Semiconductor  
www.vishay.com  
Ultrafast Plastic Rectifier  
FEATURES  
• Glass passivated pellet chip junction  
• Ultrafast reverse recovery time  
• Low forward voltage drop  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DO-201AD  
TYPICAL APPLICATIONS  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters for  
consumer, computer and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
trr  
3.0 A  
600 V  
90 A  
MECHANICAL DATA  
Case: DO-201AD  
Molding compound meets UL 94 V-0 flammability rating  
30 ns  
1.6 V  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
VF  
commercial grade  
TJ max.  
Package  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
DO-201AD  
Single die  
Diode variations  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VRRM  
VALUE  
600  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
420  
V
Maximum DC blocking voltage  
VDC  
600  
Maximumaverageforwardrectifiedcurrent,0.375"(9.5mm)leadlengthat  
TL = 110 °C  
IF(AV)  
IFSM  
3.0  
90  
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on  
rated load  
Operating junction and storage temperature range  
Reverse avalanche energy (8/20 μs surge)  
TJ, TSTG  
EAR  
-40 to +150  
10  
°C  
mJ  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
Minimum reverse breakdown voltage  
10 μA  
VBR  
600  
1.6  
V
(1)  
Maximum instantaneous forward voltage 3.0 A  
VF  
Maximum DC reverse current  
IR  
trr  
20  
30  
μA  
ns  
at rated DC blocking voltage  
Maximum reverse recovery time  
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
Note  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Revision: 19-Feb-16  
Document Number: 89434  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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