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30CTQ035S PDF预览

30CTQ035S

更新时间: 2024-11-30 12:27:07
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DEC 二极管
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2页 133K
描述
High Temperature Schottky Rectifier – Common Cathode

30CTQ035S 数据手册

 浏览型号30CTQ035S的Datasheet PDF文件第2页 
30CTQ035S ... 30CTQ045S  
30CTQ035S ... 30CTQ045S  
High Temperature Schottky Rectifier – Common Cathode  
Hochtemperatur Schottky Gleichrichterdiode – Gemeinsame Kathode  
Version 2013-06-04  
Nominal current  
Nennstrom  
2 x 15 A  
35...45 V  
1.2  
10.25±0.5  
4.5±0.2  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
4
Type  
Typ  
Plastic case  
Kunststoffgehäuse  
TO-263AB  
D2PAK  
1
2
3
1.3  
Weight approx.  
Gewicht ca.  
1.6 g  
0.8  
5.08  
0.4  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1
2
3
4
Standard packaging in tubes  
On request taped on 13” reel  
(add “R” to the part number)  
Standard Lieferform in Stangen  
Auf Anfrage gegurtet auf 13” Rolle  
(ergänze „R“ zur Artikelnummer)  
Green Molding  
Halogen-Free1  
Dimensions - Maße [mm]  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V] 2)  
Surge peak reverse voltage  
Stoßspitzensperrspannung  
VRSM [V] 2)  
Forward voltage  
Durchlass-Spannung  
VF [V] 2), Tj = 25°C  
IF = 5 A  
< 0.52  
< 0.52  
< 0.52  
IF = 15 A  
< 0.62  
< 0.62  
< 0.62  
30CTQ035S  
30CTQ040S  
30CTQ045S  
35  
40  
45  
35  
40  
45  
Max. average forward current  
Dauergrenzstrom  
TC = 155°C  
TC = 155°C  
IFAV  
IFAV  
15 A 2) 3)  
30 A 3) 4)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFRM  
IFSM  
i2t  
53 A 5)  
Peak forward surge current, 50 Hz half sine-wave  
Stoßstrom für eine 50 Hz Sinus-Halbwelle  
265 A 2)  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
351 A2s 2)  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
-50...+175°C  
-50...+175°C  
Tj  
TS  
1
From 4Q/2013 – Ab 4Q/2013  
Per diode – Pro Diode  
50% Duty cycle, rectangular waveform − 50% Tastverhältnis, Rechteckpuls  
Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)  
2
3
4
5
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
 
 
 

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