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30CTQ040S PDF预览

30CTQ040S

更新时间: 2024-11-30 20:04:59
品牌 Logo 应用领域
德欧泰克 - DIOTEC IOT二极管
页数 文件大小 规格书
2页 128K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 40V V(RRM), Silicon, TO-263AB, D2PAK-3/2

30CTQ040S 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:D2PAK-3/2Reach Compliance Code:compliant
风险等级:5.66Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.62 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:290 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-50 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:40 V
最大反向电流:50 µA子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

30CTQ040S 数据手册

 浏览型号30CTQ040S的Datasheet PDF文件第2页 
30CTQ035S ... 30CTQ045S  
30CTQ035S ... 30CTQ045S  
High Temperature Schottky Rectifier – Common Cathode  
Hochtemperatur Schottky Gleichrichterdiode – Gemeinsame Kathode  
Version 2013-06-07  
Nominal current  
Nennstrom  
2 x 15 A  
35...45 V  
1.2  
10.25±0.5  
4.5±0.2  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
4
Type  
Typ  
Plastic case  
Kunststoffgehäuse  
TO-263AB  
D2PAK  
1
2
3
1.3  
Weight approx.  
Gewicht ca.  
1.6 g  
0.8  
5.08  
0.4  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1
2
3
4
Standard packaging in tubes  
On request taped on 13” reel  
(add “R” to the part number)  
Standard Lieferform in Stangen  
Auf Anfrage gegurtet auf 13” Rolle  
(ergänze „R“ zur Artikelnummer)  
Green Molding  
Halogen-Free1  
Dimensions - Maße [mm]  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V] 2)  
Surge peak reverse voltage  
Stoßspitzensperrspannung  
VRSM [V] 2)  
Forward voltage  
Durchlass-Spannung  
VF [V] 2), Tj = 25°C  
IF = 5 A  
< 0.52  
< 0.52  
< 0.52  
IF = 15 A  
< 0.62  
< 0.62  
< 0.62  
30CTQ035S  
30CTQ040S  
30CTQ045S  
35  
40  
45  
35  
40  
45  
Max. average forward current  
Dauergrenzstrom  
TC = 155°C  
TC = 155°C  
IFAV  
IFAV  
15 A 2) 3)  
30 A 3) 4)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFRM  
IFSM  
i2t  
53 A 5)  
265/290 A 2)  
351 A2s 2)  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
-50...+175°C  
-50...+175°C  
Tj  
TS  
1
From 4Q/2013 – Ab 4Q/2013  
Per diode – Pro Diode  
50% Duty cycle, rectangular waveform − 50% Tastverhältnis, Rechteckpuls  
Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)  
2
3
4
5
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
 
 
 

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