5秒后页面跳转
30-FT12NMA200SH-M660F08 PDF预览

30-FT12NMA200SH-M660F08

更新时间: 2024-10-29 11:08:15
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
32页 1411K
描述
Easy paralleling;High speed switching;Low switching losses

30-FT12NMA200SH-M660F08 数据手册

 浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第4页浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第5页浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第6页浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第8页浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第9页浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第10页 
30-FT12NMA200SH-M660F08  
30-PT12NMA200SH-M660F08Y  
datasheet  
Half Bridge  
Half Bridge IGBT and Neutral Point FWD  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching energy losses  
as a function of collector current  
E = f(IC)  
Typical switching energy losses  
as a function of gate resistor  
E = f(RG)  
16  
12  
8
16  
12  
8
Eoff High T  
Eon High T  
Eoff Low T  
Eon Low  
T
Eoff High T  
Eon High T  
Eoff Low T  
4
4
Eon Low T  
0
0
0
100  
200  
300  
400  
I C (A)  
R G ( Ω)  
0
2
4
6
8
10  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
25/125  
350  
±15  
2
°C  
V
25/125  
350  
°C  
V
VCE  
=
VCE  
VGE  
=
VGE  
Rgon  
Rgoff  
=
=
V
±15  
V
=
IC =  
Ω
Ω
198  
A
=
2
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery energy loss  
as a function of collector current  
Erec = f(Ic)  
Typical reverse recovery energy loss  
as a function of gate resistor  
Erec = f(RG)  
4
3
2
1
0
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Erec High T  
Erec High T  
Erec Low T  
Erec Low T  
0
100  
200  
300  
400  
0
2
4
6
8
10  
I C (A)  
R G ( Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
25/125  
350  
±15  
2
°C  
V
25/125  
350  
°C  
V
VCE  
VGE  
Rgon  
=
VCE  
VGE  
=
=
=
V
±15  
V
=
IC =  
Ω
198  
A
copyright Vincotech  
7
08 Apr. 2017 / Revision 3  

与30-FT12NMA200SH-M660F08相关器件

型号 品牌 获取价格 描述 数据表
30FWJ2C12 TOSHIBA

获取价格

RECTIFIER DIODE,30V V(RRM),TO-3VAR
30FWJ2C48M TOSHIBA

获取价格

SCHOTTKY BARRIER TYPE (SOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE)
30FWJ2C48M_06 TOSHIBA

获取价格

LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE
30FWJ2CZ47M TOSHIBA

获取价格

SCHOTTKY BARRIER TYPE (LOW FORWARD VOLTAGE SCHOTTK BARRIER)
30FWJ2CZ47M_06 TOSHIBA

获取价格

LOW FORWARD VOLTAGE SCHOTTKY BARRIER
30FY-BMT-TB JST

获取价格

0.5mm间距,Non-ZIF卡入式FFC连接器。
30FY-SMT-TF JST

获取价格

0.5mm间距,Non-ZIF卡入式FFC连接器。
30GAD22 VISHAY

获取价格

CAPACITOR, CERAMIC, 3000 V, Z5U, 0.0022 uF, THROUGH HOLE MOUNT, RADIAL LEADED
30GAD47 VISHAY

获取价格

CAPACITOR, CERAMIC, 3000 V, Z5U, 0.0047 uF, THROUGH HOLE MOUNT, RADIAL LEADED
30GAS10 VISHAY

获取价格

CAPACITOR, CERAMIC, 3000 V, Z5U, 0.1 uF, THROUGH HOLE MOUNT, RADIAL LEADED