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30-FT12NMA200SH-M660F08 PDF预览

30-FT12NMA200SH-M660F08

更新时间: 2024-10-29 11:08:15
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
32页 1411K
描述
Easy paralleling;High speed switching;Low switching losses

30-FT12NMA200SH-M660F08 数据手册

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30-FT12NMA200SH-M660F08  
30-PT12NMA200SH-M660F08Y  
datasheet  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
V r [V] I C [A]  
V GE [V]  
V GS [V]  
V CE [V] I F [A]  
V DS [V] I D [A]  
T j [°C]  
Min  
Max  
Neutral Point Switch  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off incl diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
V GE(th)  
V CEsat  
I CES  
I GES  
R gint  
t d(on)  
t r  
V CE = V GE  
0,0024  
25  
5
5,8  
6,5  
V
V
25  
125  
1,05  
1,57  
1,68  
1,85  
15  
0
150  
600  
0
25  
25  
7,6  
µA  
nA  
Ω
20  
1200  
none  
25  
125  
25  
125  
25  
125  
25  
125  
25  
125  
25  
123  
114  
21  
Rise time  
21  
ns  
168  
177  
38  
t d(off)  
t f  
Turn-off delay time  
R goff = 2 Ω  
R gon = 2 Ω  
±15  
350  
150  
Fall time  
59  
1,18  
1,72  
3,59  
5,13  
E on  
Turn-on energy loss  
µWs  
pF  
E off  
C ies  
C oss  
C rss  
Q G  
Turn-off energy loss  
125  
Input capacitance  
9240  
576  
274  
940  
Output capacitance  
f
= 1 MHz  
15  
15  
480  
480  
150  
150  
25  
Reverse transfer capacitance  
Gate charge  
nC  
Thermal grease  
thickness ≤ 50um  
λ = 1 W/mK  
R th(j-s)  
Thermal resistance junction to sink  
0,48  
K/W  
Neutral Point Sw. Protection Diod  
25  
1,20  
1,78  
1,70  
1,90  
V F  
Diode forward voltage  
50  
V
125  
Thermal grease  
thickness ≤ 50um  
λ = 1 W/mK  
R th(j-s)  
Thermal resistance junction to sink  
1,16  
K/W  
Half Bridge FWD  
Diode forward voltage  
25  
150  
1,50  
2,23  
2,34  
2,54  
120  
V F  
100  
100  
V
μA  
I r  
I RRM  
Reverse leakage current  
Peak reverse recovery current  
Reverse recovery time  
1200  
350  
25  
25  
150  
25  
150  
25  
150  
25  
150  
25  
150  
184  
216  
48  
A
t rr  
ns  
114  
6,62  
12,94  
11659  
9489  
1,62  
3,42  
Q rr  
R gon = 2 Ω  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovery energy  
±15  
µC  
( di rf/dt )max  
E rec  
A/µs  
mWs  
Thermal grease  
thickness ≤ 50um  
λ = 1 W/mK  
R th(j-s)  
Thermal resistance junction to sink  
0,51  
K/W  
Thermistor  
Rated resistance  
Deviation of R 100  
Power dissipation  
Power dissipation constant  
B-value  
R
Δ R/R  
P
25  
100  
25  
25  
25  
25  
22000  
Ω
%
R 100 = 1486 Ω  
-5  
+5  
200  
2
mW  
mW/K  
K
B (25/50)  
Tol. ±3%  
Tol. ±3%  
3950  
3998  
B (25/100)  
B-value  
K
Vincotech NTC Reference  
B
copyright Vincotech  
5
08 Apr. 2017 / Revision 3  

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