Datasheet > 30-FT12NMA200SH-M660F08

30-FT12NMA200SH-M660F08

更新时间： 2023-09-03 20:24:58

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
32页	1411K
描述
Easy paralleling;High speed switching;Low switching losses

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

30-FT12NMA200SH-M660F08 数据手册

浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第2页

浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第3页

浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第4页

浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第6页

浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第7页

30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

Characteristic Values

Conditions

Value

Typ

Parameter

Symbol

Unit

V _r[V] I _C[A]

V _GE[V]

V _GS[V]

V _CE[V] I _F[A]

V _DS[V] I _D[A]

T _j[°C]

Min

Max

Neutral Point Switch

Gate emitter threshold voltage

Collector-emitter saturation voltage

Collector-emitter cut-off incl diode

Gate-emitter leakage current

Integrated Gate resistor

Turn-on delay time

V _GE(th)

V _CEsat

I _CES

I _GES

R _gint

t _d(on)

t _r

V _CE= V _GE

0,0024

5,8

6,5

125

1,05

1,57

1,68

1,85

150

600

7,6

µA

1200

none

125

123

114

Rise time

168

177

t _d(off)

t _f

Turn-off delay time

R _goff= 2 Ω

R _gon= 2 Ω

±15

350

150

Fall time

1,18

1,72

3,59

5,13

E _on

Turn-on energy loss

µWs

E _off

C _ies

C _oss

C _rss

Q _G

Turn-off energy loss

125

Input capacitance

9240

576

274

940

Output capacitance

= 1 MHz

480

150

Reverse transfer capacitance

Gate charge

Thermal grease

thickness ≤ 50um

λ = 1 W/mK

R _th(j-s)

Thermal resistance junction to sink

0,48

K/W

Neutral Point Sw. Protection Diod

1,20

1,78

1,70

1,90

V _F

Diode forward voltage

125

Thermal grease

thickness ≤ 50um

λ = 1 W/mK

R _th(j-s)

Thermal resistance junction to sink

1,16

K/W

Half Bridge FWD

Diode forward voltage

150

1,50

2,23

2,34

2,54

120

V _F

100

μA

I _r

I _RRM

Reverse leakage current

Peak reverse recovery current

Reverse recovery time

1200

350

150

184

216

t _rr

114

6,62

12,94

11659

9489

1,62

3,42

Q _rr

R _gon= 2 Ω

Reverse recovered charge

Peak rate of fall of recovery current

Reverse recovery energy

±15

µC

( di _rf/dt )_max

E _rec

A/µs

mWs

Thermal grease

thickness ≤ 50um

λ = 1 W/mK

R _th(j-s)

Thermal resistance junction to sink

0,51

K/W

Thermistor

Rated resistance

Deviation of R ₁₀₀

Power dissipation

Power dissipation constant

B-value

Δ _R/R

100

22000

R ₁₀₀= 1486 Ω

-5

200

mW/K

B _(25/50)

Tol. ±3%

3950

3998

B _(25/100)

B-value

Vincotech NTC Reference

08 Apr. 2017 / Revision 3

1 2 3 456 7 8...32

下载PDF

与30-FT12NMA200SH-M660F08相关器件

型号	品牌	描述	获取价格	数据表
30FWJ2C12	TOSHIBA	RECTIFIER DIODE,30V V(RRM),TO-3VAR	获取价格
30FWJ2C48M	TOSHIBA	SCHOTTKY BARRIER TYPE (SOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE)	获取价格
30FWJ2C48M_06	TOSHIBA	LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE	获取价格
30FWJ2CZ47M	TOSHIBA	SCHOTTKY BARRIER TYPE (LOW FORWARD VOLTAGE SCHOTTK BARRIER)	获取价格
30FWJ2CZ47M_06	TOSHIBA	LOW FORWARD VOLTAGE SCHOTTKY BARRIER	获取价格
30FY-BMT-TB	JST	0.5mm间距，Non-ZIF卡入式FFC连接器。	获取价格