30-FT12NMA200SH-M660F08
30-PT12NMA200SH-M660F08Y
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] I C [A]
V GE [V]
V GS [V]
V CE [V] I F [A]
V DS [V] I D [A]
T j [°C]
Min
Max
Neutral Point Switch
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,0024
25
5
5,8
6,5
V
V
25
125
1,05
1,57
1,68
1,85
15
0
150
600
0
25
25
7,6
µA
nA
Ω
20
1200
none
25
125
25
125
25
125
25
125
25
125
25
123
114
21
Rise time
21
ns
168
177
38
t d(off)
t f
Turn-off delay time
R goff = 2 Ω
R gon = 2 Ω
±15
350
150
Fall time
59
1,18
1,72
3,59
5,13
E on
Turn-on energy loss
µWs
pF
E off
C ies
C oss
C rss
Q G
Turn-off energy loss
125
Input capacitance
9240
576
274
940
Output capacitance
f
= 1 MHz
15
15
480
480
150
150
25
Reverse transfer capacitance
Gate charge
nC
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
R th(j-s)
Thermal resistance junction to sink
0,48
K/W
Neutral Point Sw. Protection Diod
25
1,20
1,78
1,70
1,90
V F
Diode forward voltage
50
V
125
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
R th(j-s)
Thermal resistance junction to sink
1,16
K/W
Half Bridge FWD
Diode forward voltage
25
150
1,50
2,23
2,34
2,54
120
V F
100
100
V
μA
I r
I RRM
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
1200
350
25
25
150
25
150
25
150
25
150
25
150
184
216
48
A
t rr
ns
114
6,62
12,94
11659
9489
1,62
3,42
Q rr
R gon = 2 Ω
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
±15
µC
( di rf/dt )max
E rec
A/µs
mWs
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
R th(j-s)
Thermal resistance junction to sink
0,51
K/W
Thermistor
Rated resistance
Deviation of R 100
Power dissipation
Power dissipation constant
B-value
R
Δ R/R
P
25
100
25
25
25
25
22000
Ω
%
R 100 = 1486 Ω
-5
+5
200
2
mW
mW/K
K
B (25/50)
Tol. ±3%
Tol. ±3%
3950
3998
B (25/100)
B-value
K
Vincotech NTC Reference
B
copyright Vincotech
5
08 Apr. 2017 / Revision 3