5秒后页面跳转
30-FT12NMA200SH-M660F08 PDF预览

30-FT12NMA200SH-M660F08

更新时间: 2024-10-29 11:08:15
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
32页 1411K
描述
Easy paralleling;High speed switching;Low switching losses

30-FT12NMA200SH-M660F08 数据手册

 浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第1页浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第2页浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第3页浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第5页浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第6页浏览型号30-FT12NMA200SH-M660F08的Datasheet PDF文件第7页 
30-FT12NMA200SH-M660F08  
30-PT12NMA200SH-M660F08Y  
datasheet  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
V r [V] I C [A]  
V GE [V]  
V GS [V]  
V CE [V] I F [A]  
V DS [V] I D [A]  
T j [°C]  
Min  
Max  
Half Bridge Sw. Protection Diode  
25  
125  
1,6  
2,12  
1,74  
2,6  
V F  
Forward voltage  
15  
V
Thermal grease  
thickness ≤ 50um  
λ = 1 W/mK  
R th(j-s)  
Thermal resistance junction to sink  
1,35  
K/W  
Half Bridge Switch  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current incl. Diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
V GE(th)  
V CEsat  
I CES  
I GES  
R gint  
t d(on)  
t r  
V CE = V GE  
0,0068  
25  
5,2  
2
5,8  
6,4  
2,4  
V
V
25  
125  
2,17  
2,58  
15  
0
200  
1200  
0
25  
25  
24  
µA  
nA  
Ω
20  
480  
1
25  
125  
25  
125  
25  
125  
25  
125  
25  
125  
25  
124  
126  
27  
Rise time  
32  
ns  
190  
234  
41  
t d(off)  
t f  
Turn-off delay time  
R goff = 2 Ω  
R gon = 2 Ω  
±15  
350  
200  
Fall time  
61  
2,38  
4,20  
5,02  
7,97  
E on  
Turn-on energy loss  
mWs  
pF  
E off  
C ies  
C oss  
C rss  
Q G  
Turn-off energy loss  
125  
Input capacitance  
11080  
1150  
640  
Output capacitance  
f
= 1 MHz  
0
25  
25  
Reverse transfer capacitance  
Gate charge  
15  
960  
160  
960  
nC  
Thermal grease  
thickness ≤ 50um  
λ = 1 W/mK  
R th(j-s)  
Thermal resistance junction to sink  
0,22  
K/W  
*additional value stands for built-in capacitor  
Neutral Point FWD  
Diode forward voltage  
25  
125  
25  
125  
25  
125  
25  
125  
25  
125  
25  
1,4  
1,80  
1,61  
130  
169  
93  
3,3  
V F  
I RRM  
150  
200  
V
A
Peak reverse recovery current  
Reverse recovery time  
t rr  
ns  
118  
4,47  
11,00  
5241  
1766  
0,91  
2,39  
Q rr  
R gon = 2 Ω  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovered energy  
±15  
350  
µC  
( di rf/dt )max  
E rec  
A/µs  
mWs  
125  
Thermal grease  
thickness ≤ 50um  
λ = 1 W/mK  
R th(j-s)  
Thermal resistance junction to sink  
0,64  
K/W  
copyright Vincotech  
4
08 Apr. 2017 / Revision 3  

与30-FT12NMA200SH-M660F08相关器件

型号 品牌 获取价格 描述 数据表
30FWJ2C12 TOSHIBA

获取价格

RECTIFIER DIODE,30V V(RRM),TO-3VAR
30FWJ2C48M TOSHIBA

获取价格

SCHOTTKY BARRIER TYPE (SOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE)
30FWJ2C48M_06 TOSHIBA

获取价格

LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE
30FWJ2CZ47M TOSHIBA

获取价格

SCHOTTKY BARRIER TYPE (LOW FORWARD VOLTAGE SCHOTTK BARRIER)
30FWJ2CZ47M_06 TOSHIBA

获取价格

LOW FORWARD VOLTAGE SCHOTTKY BARRIER
30FY-BMT-TB JST

获取价格

0.5mm间距,Non-ZIF卡入式FFC连接器。
30FY-SMT-TF JST

获取价格

0.5mm间距,Non-ZIF卡入式FFC连接器。
30GAD22 VISHAY

获取价格

CAPACITOR, CERAMIC, 3000 V, Z5U, 0.0022 uF, THROUGH HOLE MOUNT, RADIAL LEADED
30GAD47 VISHAY

获取价格

CAPACITOR, CERAMIC, 3000 V, Z5U, 0.0047 uF, THROUGH HOLE MOUNT, RADIAL LEADED
30GAS10 VISHAY

获取价格

CAPACITOR, CERAMIC, 3000 V, Z5U, 0.1 uF, THROUGH HOLE MOUNT, RADIAL LEADED