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2SK4080-ZK-E1-AY PDF预览

2SK4080-ZK-E1-AY

更新时间： 2024-10-14 15:29:39
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
8页 190K
描述
Small Signal Field-Effect Transistor, 48A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, TO-252, MP-3ZK, 3 PIN

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2SK4080-ZK-E1-AY 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：TO-252AA包装说明：SMALL OUTLINE, R-PSSO-G2
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.28外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：48 A最大漏源导通电阻：0.015 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：MATTE TIN端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SK4080-ZK-E1-AY 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK4080  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
The 2SK4080 is N-channel MOS FET device that features a low on-state resistance and excellent switching  
characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous  
rectifier.  
FEATURES  
• Low on-state resistance  
RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A)  
• Low QGD: QGD = 6.3 nC TYP.  
• 4.5 V drive available  
(TO-251)  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
2SK4080(1)-S27-AY Note  
2SK4080-ZK-E1-AY Note  
2SK4080-ZK-E2-AY Note  
<R>  
TO-251 (MP-3-b)  
TO-252 (MP-3ZK)  
TO-252 (MP-3ZK)  
Note Pb-free (This product does not contain Pb in external electrode.)  
(TO-252)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
30  
±20  
±48  
±144  
29  
V
V
A
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation  
W
W
°C  
PT2  
1.0  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
IAS  
–55 to +150  
°C  
A
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
21  
EAS  
44.1  
mJ  
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%  
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D18214EJ2V0DS00 (2nd edition)  
Date Published March 2007 NS CP(K)  
Printed in Japan  
2006  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
12345678

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与2SK4080-ZK-E1-AY相关器件

型号 品牌 获取价格 描述 数据表
2SK4080-ZK-E2-AY NEC

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 		Small Signal Field-Effect Transistor, 48A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-
2SK4081 NEC

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 		SWITCHING N-CHANNEL POWER MOS FET
2SK4081(1)-S27-AY NEC

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 		Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o
2SK4081(1)-S27-AY RENESAS

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 		2A, 600V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, LEAD FREE, MP-3B, TO-251, 3 PI
2SK4081-S15-AY NEC

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 		SWITCHING N-CHANNEL POWER MOS FET
2SK4081-S27-AY NEC

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 		SWITCHING N-CHANNEL POWER MOS FET
2SK4081-ZK-E1-AY NEC

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 		SWITCHING N-CHANNEL POWER MOS FET
2SK4081-ZK-E1-AY RENESAS

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 		2A, 600V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, MP-3ZK, TO-252, 3 P
2SK4081-ZK-E2-AY NEC

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 		SWITCHING N-CHANNEL POWER MOS FET
2SK4081-ZK-E2-AY RENESAS

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 		2A, 600V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, MP-3ZK, TO-252, 3 P

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