生命周期: | Transferred | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.37 | 其他特性: | HIGH RELIABILITY |
雪崩能效等级(Eas): | 71 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 650 V | 最大漏极电流 (Abs) (ID): | 11 A |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.85 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 37 W |
最大脉冲漏极电流 (IDM): | 40 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NDF10N60ZH | ONSEMI |
功能相似 |
N-Channel Power MOSFET 600 V, 0.75 Ohm | |
NDF10N60ZG | ONSEMI |
功能相似 |
N-Channel Power MOSFET 0.65 Ω, 600 Volts |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK4088LS-1E | ONSEMI |
获取价格 |
Power MOSFET, 650V, 11A, 0.85Ω, Single N-Channel, TO-220F-3FS, 50-TUBE | |
2SK4089LS | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
2SK4089LS_0710 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK409 | HITACHI |
获取价格 |
SILICON N CHANNEL MOS FET | |
2SK4090(1)-S27-AY | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.064A I(D), 30V, 1-Element, N-Channel, Silicon, Met | |
2SK4090-ZK-E1-AY | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.064A I(D), 30V, 1-Element, N-Channel, Silicon, Met | |
2SK4090-ZK-E2-AY | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.064A I(D), 30V, 1-Element, N-Channel, Silicon, Met | |
2SK4091(1)-S27-AY | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.03A I(D), 30V, 1-Element, N-Channel, Silicon, Meta | |
2SK4091-ZK-E1-AY | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.03A I(D), 30V, 1-Element, N-Channel, Silicon, Meta | |
2SK4092 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET |