Datasheet > 2SK3565_06

2SK3565_06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	250K
描述
Silicon N Channel MOS Type Switching Regulator Applications

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2SK3565_06 数据手册

2SK3565

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

= ±25 V, V

= 0 V

⎯

±30

⎯

±10

⎯

μA

GSS

Gate-source breakdown voltage

Drain cut-off current

=±10 μA, V

= 0 V

(BR) GSS

= 720 V, V

= 0 V

⎯

100

⎯

μA

DSS

Drain-source breakdown voltage

Gate threshold voltage

= 10 mA, V

= 0 V

900

2.0

⎯

(BR) DSS

= 10 V, I = 1 mA

⎯

4.0

2.5

⎯

Drain-source ON resistance

Forward transfer admittance

Input capacitance

= 10 V, I = 3 A

2.0

4.5

1150

DS (ON)

⎪Y ⎪

= 20 V, I = 3 A

2.0

⎯

iss

= 25 V, V

= 0 V, f = 1 MHz

Reverse transfer capacitance

Output capacitance

⎯

rss

⎯

100

⎯

oss

10 V

0 V

= 3 A

OUT

Rise time

⎯

Turn-on time

Switching time

50 Ω

66.7 Ω

Fall time

∼

−

200 V

Duty 1%, t = 10 μs

Turn-off time

170

off

Total gate charge

Gate-source charge

Gate-drain charge

⎯

∼

−

400 V, V

= 10 V, I = 5 A

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

⎯

(Note 1)

Pulse drain reverse current

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

⎯

−1.7

⎯

DRP

= 5 A, V

= 0 V

DSF

= 0 V,

900

5.4

μC

dI /dt = 100 A/μs

⎯

Marking

K3565

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-11-10

123 4 5 6

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