Datasheet > 2SK3033(TENTATIVE)

2SK3033(TENTATIVE)

更新时间： 2024-09-25 23:20:39

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
2页	37K
描述
2SK3033 (Tentative) - Silicon N-Channel Power F-MOS FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK3033(TENTATIVE) 数据手册

Power F-MOS FETs

2SK3033 (Tentative)

Silicon N-Channel Power F-MOS FET

■ Features

● Avalanche energy capacity guaranteed

● High-speed switching

● Low ON-resistance

unit: mm

● No secondary breakdown

● Low-voltage drive

● High electrostatic breakdown voltage

4.6±0.2

9.9±0.3

2.9±0.2

φ3.2±0.1

■ Applications

● Contactless relay

● Diving circuit for a solenoid

● Driving circuit for a motor

● Control equipment

2.6±0.1

1.2±0.15

0.7±0.1

1.45±0.15

● Switching power supply

0.75±0.1

■ Absolute Maximum Ratings (T_C= 25°C)

2.54±0.2

5.08±0.4

Parameter

Symbol

Ratings

Unit

Drain to Source breakdown voltage V_DSS

100

2 3

Gate to Source voltage

Pulse

Avalanche energy capacity

V_GSS

I_D

±20

1: Gate

2: Drain

3: Source

±40

Drain current

I_DP

±80

TO-220E Package

EAS^*

Internal Connection

Allowable power

dissipation

T_C= 25°C

Ta = 25°C

P_D

Channel temperature

Storage temperature

T_ch

150

°C

T_stg

−55 to +150

L = 0.1mH, I_L= 40A, 1 pulse

■ Electrical Characteristics (T_C= 25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

µA

Drain to Source cut-off current

Gate to Source leakage current

I_DSS

V_DS= 80V, V_GS= 0

V_GS= ±20V, V_DS= 0

_D= 1mA, V_GS= 0

V_DS= 10V, I_D= 1mA

R_DS(on)1V_GS= 10V, I_D= 20A

I_GSS

±10

Drain to Source breakdown voltage V_DSS

100

Gate threshold voltage

V_th

2.5

mΩ

Drain to Source ON-resistance

R_DS(on)2

| Y_fs|

V_GS= 4V, I_D= 20A

Forward transfer admittance

Diode forward voltage

V_DS= 10V, I_D= 20A

I_DR= 20A, V_GS= 0

V_DSF

−1.4

Input capacitance (Common Source) C_iss

Output capacitance (Common Source) C_oss

Reverse transfer capacitance (Common Source) C_rss

2400

530

220

V_DS= 10V, V_GS= 0, f = 1MHz

Turn-on time (delay time)

Rise time

t_d(on)

t_r

V_DD= 30V, I_D= 20A

Fall time

t_f

V_GS= 10V, R_L= 1.5Ω

120

600

Turn-off time (delay time)

Thermal resistance between channel and case

Thermal resistance between channel and atmosphere

t_d(off)

R_th(ch-c)

R_th(ch-a)

2.08

62.5

°C/W

中文翻译

下载PDF

与2SK3033(TENTATIVE)相关器件

型号	品牌	获取价格	描述	数据表
2SK3034	PANASONIC	获取价格	Silicon N-Channel Power F-MOS FET
2SK303-4	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 30V V(BR)DSS \| 2.5MA I(DSS) \| TO-236AB
2SK3034(TENTATIVE)	ETC	获取价格	2SK3034 (Tentative) - Silicon N-Channel Power F-MOS FET
2SK3035	PANASONIC	获取价格	Silicon N-Channel Power F-MOS FET
2SK303-5	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 30V V(BR)DSS \| 5MA I(DSS) \| TO-236AB
2SK3035(TENTATIVE)	PANASONIC	获取价格	Silicon N-Channel Power F-MOS FET
2SK3036	PANASONIC	获取价格	Silicon N-Channel Power F-MOS FET
2SK3037	PANASONIC	获取价格	Silicon N-Channel Power F-MOS FET
2SK3037(TENTATIVE)	PANASONIC	获取价格	Silicon N-Channel Power F-MOS FET
2SK303G-V2-AE3-R	UTC	获取价格	Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junc

与2SK3033(TENTATIVE)相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

9
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

8
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

12
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

19

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK3033(TENTATIVE)

2SK3033(TENTATIVE) 数据手册

与2SK3033(TENTATIVE)相关器件

与2SK3033(TENTATIVE)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK3033(TENTATIVE)

2SK3033(TENTATIVE) 数据手册

与2SK3033(TENTATIVE)相关器件

与2SK3033(TENTATIVE)相关文章

您还可以找

您在本页遇到什么问题？