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2SK3027(TENTATIVE) PDF预览

2SK3027(TENTATIVE)

更新时间: 2024-01-22 09:41:01
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描述
2SK3027 (Tentative) - Silicon N-Channel Power F-MOS FET

2SK3027(TENTATIVE) 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220E包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.88Is Samacsys:N
雪崩能效等级(Eas):125 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):50 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.017 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):60 W
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3027(TENTATIVE) 数据手册

 浏览型号2SK3027(TENTATIVE)的Datasheet PDF文件第2页 
Power F-MOS FETs  
2SK3027 (Tentative)  
Silicon N-Channel Power F-MOS FET  
Features  
Avalanche energy capacity guaranteed  
High-speed switching  
Low ON-resistance  
unit: mm  
No secondary breakdown  
Low-voltage drive  
High electrostatic breakdown voltage  
4.6±0.2  
9.9±0.3  
2.9±0.2  
φ3.2±0.1  
Applications  
Contactless relay  
Diving circuit for a solenoid  
Driving circuit for a motor  
Control equipment  
2.6±0.1  
1.2±0.15  
0.7±0.1  
1.45±0.15  
Switching power supply  
0.75±0.1  
Absolute Maximum Ratings (TC = 25°C)  
2.54±0.2  
5.08±0.4  
Parameter  
Symbol  
Ratings  
Unit  
V
Drain to Source breakdown voltage VDSS  
60  
±20  
1
2 3  
7
Gate to Source voltage  
DC  
Pulse  
Avalanche energy capacity  
VGSS  
ID  
V
1: Gate  
2: Drain  
3: Source  
±50  
A
Drain current  
IDP  
±100  
125  
A
TO-220E Package (a)  
EAS*  
mJ  
Internal Connection  
Allowable power  
dissipation  
TC = 25°C  
Ta = 25°C  
60  
PD  
W
D
2
G
Channel temperature  
Storage temperature  
Tch  
150  
°C  
°C  
Tstg  
55 to +150  
S
*
L = 0.1mH, IL = 50A, 1 pulse  
Electrical Characteristics (TC = 25°C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max  
10  
Unit  
µA  
µA  
V
Drain to Source cut-off current  
Gate to Source leakage current  
IDSS  
VDS = 50V, VGS = 0  
VGS = ±20V, VDS = 0  
D = 1mA, VGS = 0  
VDS = 10V, ID = 1mA  
RDS(on)1 VGS = 10V, ID = 25A  
IGSS  
±10  
Drain to Source breakdown voltage VDSS  
I
60  
1
Gate threshold voltage  
Vth  
2.5  
12  
17  
V
8
mΩ  
mΩ  
S
Drain to Source ON-resistance  
RDS(on)2  
| Yfs |  
V
GS = 4V, ID = 25A  
11  
49  
Forward transfer admittance  
Diode forward voltage  
VDS = 10V, ID = 25A  
IDR = 25A, VGS = 0  
25  
VDSF  
1.2  
V
Input capacitance (Common Source) Ciss  
Output capacitance (Common Source) Coss  
Reverse transfer capacitance (Common Source) Crss  
3600  
1250  
680  
20  
pF  
VDS = 10V, VGS = 0, f = 1MHz  
pF  
pF  
Turn-on time (delay time)  
Rise time  
td(on)  
tr  
ns  
VDD = 30V, ID = 25A  
65  
ns  
Fall time  
tf  
VGS = 10V, RL = 1.2Ω  
250  
960  
ns  
Turn-off time (delay time)  
Thermal resistance between channel and case  
Thermal resistance between channel and atmosphere  
td(off)  
Rth(ch-c)  
Rth(ch-a)  
ns  
2.08  
62.5  
°C/W  
°C/W  
1

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