Datasheet > 2SK302-GR(TE85L,F)

2SK302-GR(TE85L,F)

更新时间： 2024-02-21 06:14:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	391K
描述
TRANS MOSFET N-CH

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2SK302-GR(TE85L,F) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.82

2SK302-GR(TE85L,F) 数据手册

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2SK302

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK302

FM Tuner, VHF RF Amplifier Applications

Unit: mm

•

Low reverse transfer capacitance: C = 0.035 pF (typ.)

rss

Low noise figure: NF = 1.7dB (typ.)

High power gain: G = 28dB (typ.)

Recommend operation voltage: 5~15 V

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±5

Gate-source voltage

Drain current

°C

Drain power dissipation

Channel temperature

Storage temperature

150

125

stg

−55~125

°C

JEDEC

JEITA

TO-236

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

―

TOSHIBA

2-3F1C

Weight: 0.012 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

= 0 V, V

= ±5 V

⎯

±50

GSS

Drain-source voltage

= −4 V, I = 100 μA

⎯

DSX

DSS

Drain current

= 10 V, V

= 0 V

1.5

⎯

(Note)

Gate-source cut-off voltage

Forward transfer admittance

Input capacitance

= 10 V, I = 100 μA

⎯

−2.5

⎯

GS (OFF)

⎪Y ⎪

= 10 V, V

= 0 V, f = 1 kHz

= 0 V, f = 1 MHz

3.0

⎯

iss

rss

Reverse transfer capacitance

Power gain

0.035 0.050

⎯

= 10 V, V

= 0 V,

f = 100 MHz (Figure 1)

Noise figure

1.7

3.0

Note: I

classification O: 1.5~3.5 mA, Y: 3.0~7.0 mA, GR: 6.0~14.0 mA

DSS

2007-11-01

12 3 4 5 6 7

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