生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 20 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2796(L)|2SK2796(S) | ETC |
获取价格 |
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2SK2796(S) | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252AA |
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2SK2796(S)-(1) | RENESAS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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2SK2796(S)-(2) | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,5A I(D),TO-252VAR |
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2SK2796(S)-(3) | RENESAS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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2SK2796(S)TL | RENESAS |
获取价格 |
5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET |
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2SK2796(S)TR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal |
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2SK2796(S)TR | RENESAS |
获取价格 |
5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET |
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2SK2796L | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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2SK2796L | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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