Datasheet > 2SK2553(S)-(2)

2SK2553(S)-(2)

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
9页	45K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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2SK2553(S)-(2) 技术参数

2SK2553(L), 2SK2553(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-357H (Z)

9th. Edition

Feb. 1999

Application

High speed power switching

Features

•

Low on-resistance

R_DS(on)= 7 mΩ typ.

High speed switching

4 V gate drive device can be driven from 5 V source

Outline

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
2SK2553(S)TL	HITACHI	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
2SK2553(S)TL	RENESAS	获取价格	50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2553(S)TR	RENESAS	获取价格	50A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2553(S)TR	HITACHI	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
2SK2553L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2553L-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2553S	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2553S-E	RENESAS	获取价格	暂无描述
2SK2553STL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2554	RENESAS	获取价格	Silicon N Channel MOS FET