2SK2569ZN-TL

更新时间： 2024-10-01 13:04:27

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2SK2569ZN-TL 数据手册

2SK2569

Silicon N-Channel MOS FET

ADE-208-384

1st. Edition

Application

Low frequency power switching

Features

•

Low on-resistance.

R_DS(on)= 2.6 max. (at V _GS= 4 V, I_D= 100mA)

2.5V gate drive device.

Small package (MPAK).

Outline

MPAK

1. Source

2. Gate

3. Drain

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
2SK2569ZN-TL-E	RENESAS	获取价格	Silicon N Channel MOS FET
2SK2569ZN-TR	RENESAS	获取价格	0.2A, 50V, 5ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2569ZN-TR	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 50V, 5ohm, 1-Element, N-Channel, Silicon, Metal-
2SK2569ZN-TR-E	RENESAS	获取价格	Silicon N Channel MOS FET
2SK2569ZN-UR	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 50V, 5ohm, 1-Element, N-Channel, Silicon, Metal-
2SK2569ZN-UR	RENESAS	获取价格	暂无描述
2SK2570	RENESAS	获取价格	Silicon N Channel MOS FET Low Frequency Power Switching
2SK2570	HITACHI	获取价格	Silicon N-Channel MOS FET Low Frequency Power Switching
2SK2570ZL	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 20V, 4ohm, 1-Element, N-Channel, Silicon, Metal-
2SK2570ZL	RENESAS	获取价格	0.2A, 20V, 4ohm, N-CHANNEL, Si, POWER, MOSFET