是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SC-59A | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.63 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
最小漏源击穿电压: | 50 V | 最大漏极电流 (Abs) (ID): | 0.2 A |
最大漏极电流 (ID): | 0.2 A | 最大漏源导通电阻: | 2.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e6 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.15 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 20 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2569ZN-UR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 50V, 5ohm, 1-Element, N-Channel, Silicon, Metal- | |
2SK2569ZN-UR | RENESAS |
获取价格 |
暂无描述 | |
2SK2570 | RENESAS |
获取价格 |
Silicon N Channel MOS FET Low Frequency Power Switching | |
2SK2570 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET Low Frequency Power Switching | |
2SK2570ZL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 20V, 4ohm, 1-Element, N-Channel, Silicon, Metal- | |
2SK2570ZL | RENESAS |
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0.2A, 20V, 4ohm, N-CHANNEL, Si, POWER, MOSFET | |
2SK2570ZL-01 | RENESAS |
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0.2A, 20V, 4ohm, N-CHANNEL, Si, POWER, MOSFET | |
2SK2570ZL-TL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 20V, 4ohm, 1-Element, N-Channel, Silicon, Metal- | |
2SK2570ZL-TL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET Low Frequency Power Switching | |
2SK2570ZL-TR | HITACHI |
获取价格 |
0.2A, 20V, 4ohm, N-CHANNEL, Si, POWER, MOSFET |