2SK2569ZN-UR

更新时间： 2024-10-01 13:04:27

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2SK2569ZN-UR 数据手册

2SK2569

Silicon N Channel MOS FET

REJ03G1018-0300

Rev.3.00

Dec 27, 2006

Application

High speed power switching

Features

•

Low on-resistance.

R_DS(on)= 2.6 Ω max. (at V_GS= 4 V, I_D= 100 mA)

2.5 V gate drive device.

Small package (MPAK).

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

1. Source

2. Gate

3. Drain

Note: Marking is "ZN–"

Rev.3.00 Dec 27, 2006 page 1 of 6

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
2SK2570	RENESAS	获取价格	Silicon N Channel MOS FET Low Frequency Power Switching
2SK2570	HITACHI	获取价格	Silicon N-Channel MOS FET Low Frequency Power Switching
2SK2570ZL	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 20V, 4ohm, 1-Element, N-Channel, Silicon, Metal-
2SK2570ZL	RENESAS	获取价格	0.2A, 20V, 4ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2570ZL-01	RENESAS	获取价格	0.2A, 20V, 4ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2570ZL-TL	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 20V, 4ohm, 1-Element, N-Channel, Silicon, Metal-
2SK2570ZL-TL-E	RENESAS	获取价格	Silicon N Channel MOS FET Low Frequency Power Switching
2SK2570ZL-TR	HITACHI	获取价格	0.2A, 20V, 4ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2570ZL-TR-E	RENESAS	获取价格	Silicon N Channel MOS FET Low Frequency Power Switching
2SK2570ZL-UL	RENESAS	获取价格	Power Field-Effect Transistor, 0.2A I(D), 20V, 4ohm, 1-Element, N-Channel, Silicon, Metal-