Datasheet > 2SK2414-Z-E2

2SK2414-Z-E2

更新时间： 2024-02-29 19:00:30

品牌	Logo	应用领域
日电电子 - NEC		开关晶体管
页数	文件大小	规格书
8页	58K
描述
Small Signal Field-Effect Transistor, 10A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-3Z, SC-63, 3 PIN

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中文翻译

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技术参数
数据手册

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2SK2414-Z-E2 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.82	配置：	Single
最大漏极电流 (Abs) (ID)：	10 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	150 °C	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	20 W
子类别：	FET General Purpose Power	表面贴装：	YES
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

2SK2414-Z-E2 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2414, 2SK2414-Z

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2414 is N-Channel MOS Field Effect Transistor designed

for high voltage switching applications.

PACKAGE DIMENSIONS

(in millimeter)

2.3 ±0.2

6.5 ±0.2

5.0 ±0.2

0.5 ±0.1

FEATURES

• Low On-Resistance

R^DS(on)1= 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A)

2 3

R^DS(on)2= 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)

1.3 MAX.

• Low Ciss

Ciss = 840 pF TYP.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings

0.6 ±0.1

2.3 2.3

1. Gate

2. Drain

QUALITY GRADE

3. Source

4. Fin (Drain)

Standard

MP-3

Please refer to "Quality grade on NEC Semiconductor Devices" (Document

number IEI-1209) published by NEC Corporation to know the

specification of quality grade on the devices and its recommended applica-

2.3 ±0.2

6.5 ±0.2

5.0 ±0.2

0.5 ±0.1

tions.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

1 2

Drain to Source Voltage

VDSS

VGSS

I^D(DC)

I^D(pulse)

PT1

±20

±10

±40

0.9 0.8

1.3 MAX.

Gate to Source Voltage

MAX. MAX.

2.3 2.3

0.8

Drain Current (DC)

1. Gate

2. Drain

3. Source

Drain Current (pulse)*

Total Power Dissipation (Tc = 25 ˚C)

Total Power Dissipation (T^A= 25 ˚C)

Channel Temperature

°C

4. Fin (Drain)

PT2

1.0

150

MP-3Z (SURFACE MOUNT TYPE)

Tch

Storage Temperature

Tstg

–55 to +150 °C

Drain

Single Avalanche Current**

Single Avalanche Energy**

I^AS

EAS

Body

Diode

Gate

PW ≤ 10 µs, Duty Cycle ≤ 1 %

** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

Gate Protection

Diode

Source

The information in this document is subject to change without notice.

Document No. D13193EJ2V0DS00 (2nd edition)

(Previous No. TC-2495)

Date Published March 1998 N CP(K)

Printed in Japan

1994

12 3 4 5 6 7 8

中文翻译

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与2SK2414-Z-E2相关器件

型号	品牌	获取价格	描述	数据表
2SK2414-Z-E2(JM)	RENESAS	获取价格	2SK2414-Z-E2(JM)
2SK2414-Z-T1	RENESAS	获取价格	2SK2414-Z-T1
2SK2415	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2415	KEXIN	获取价格	MOS Field Effect Transistor
2SK2415	TYSEMI	获取价格	Low On-Resistance RDS(on)1 = 0.10 MAX. ( VGS = 10 V, ID = 4.0A) Low Ciss Ciss = 570 pF TYP
2SK2415(0)-Z-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,8A I(D),TO-252
2SK2415(0)-Z-E2-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,8A I(D),TO-252
2SK2415Z	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 8A I(D) \| TO-252
2SK2415-Z	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2415-Z-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-o

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