Datasheet > 2SK2398_06

2SK2398_06

更新时间： 2024-01-28 03:07:22

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	759K
描述
Silicon N Channel MOS Type DC−DC Converter and Motor Drive Applications

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中文翻译

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数据手册

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2SK2398_06 数据手册

2SK2398

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2398

DC−DC Converter and Motor Drive Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 22 mΩ (typ.)

DS (ON)

: |Y | = 27 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 60 V)

DSS

: V = 1.5~3.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±20

GSS

DC (Note 1)

1. GATE

Drain current

Pulse (Note 1)

180

100

2. DRAIN (HEAT SINK)

3. SOURCE

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

246

JEDEC

JEITA

―

(Note 2)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-16C1B

150

Weight: 4.6 g (typ.)

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

1.25

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 165 μH, R = 25 Ω, I = 45 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-17

12 3 4 5 6

中文翻译

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与2SK2398_06相关器件

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2SK2398_09	TOSHIBA	获取价格	DC−DC Converter and Motor Drive Applications
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2SK2399(2-7J1B)	TOSHIBA	获取价格	TRANSISTOR 5 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7J1B, 3 PIN, FET General P
2SK2399(SM)	TOSHIBA	获取价格	暂无描述
2SK2399(TE16L1,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,5A I(D),TO-252
2SK2399_06	TOSHIBA	获取价格	Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications
2SK2399_10	TOSHIBA	获取价格	Chopper Regulator, DC/DC Converter and Motor Drive Applications
2SK240	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| DUAL \| 2.6MA I(DSS)
2SK2400	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2400_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic

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