Datasheet > 2SK2400_09

2SK2400_09

更新时间： 2024-02-04 02:00:22

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器稳压器电机 DC-DC转换器
页数	文件大小	规格书
6页	378K
描述
Chopper Regulator, DC−DC Converter and Motor Drive

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中文翻译

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数据手册

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2SK2400_09 数据手册

2SK2400

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)

2SK2400

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z 4-V gate drive

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 17 Ω (typ.)

DS (ON)

: |Y | = 4.5 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 100 V)

DSS

: V = 0.8 to 2.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

100

±20

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse (Note 1)

JEDEC

JEITA

―

Drain power dissipation

1.3

Single pulse avalanche energy

(Note 2)

180

TOSHIBA

2-8M1B

Avalanche current

0.13

Weight: 0.54 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

96.1

Unit

Thermal resistance, channel to ambient

°C / W

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 11.6 mH, R = 25 Ω, I

= 5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

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