Datasheet > 2SK2401_06

2SK2401_06

更新时间： 2024-02-09 05:39:28

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	770K
描述
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

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中文翻译

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数据手册

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2SK2401_06 数据手册

2SK2401

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2401

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.13 Ω (typ.)

DS (ON)

: |Y | = 17 S (typ.)

z Low leakage current : I

= 100 μA (max) (V

= 200 V)

DSS

z Enhancement mode : V = 1.5~3.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

200

±20

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

166

(Note 2)

Avalanche current

7.5

TOSHIBA

2-10S1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.5 g (typ.)

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

1.67

83.3

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

JEDEC

JEITA

―

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 50 V, T = 25°C (initial), L = 1.2 mH, R = 25 Ω, I = 15 A

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-20

12 3 4 5 6

中文翻译

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与2SK2401_06相关器件

型号	品牌	获取价格	描述	数据表
2SK2401_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2403	SANYO	获取价格	General-Purpose Switching Device Applications
2SK2404	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 5A I(D)
2SK2405	SANYO	获取价格	General-Purpose Switching Device Applications
2SK2406	SANYO	获取价格	Ultrahigh-Speed Switching, Motor Driver Applications
2SK2406TL	ONSEMI	获取价格	Power Field-Effect Transistor, 1A I(D), 450V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal
2SK2406TP	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 1A I(D) \| TO-251VAR
2SK2406TP-FA	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 1A I(D) \| TO-252VAR
2SK2407	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 10A I(D) \| TO-220AB
2SK2408	HITACHI	获取价格	Silicon N-Channel MOS FET

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