2SK2413

更新时间： 2024-09-24 22:52:55

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	122K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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中文翻译

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2SK2413 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2413

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

PACKAGE DIMENSIONS

The 2SK2413 is N-Channel MOS Field Effect Transistor de-

signed for high speed switching applications.

(in millimeter)

FEATURES

4.5 ±±.ꢀ

• Low On-Resistance

8.± ±±.ꢀ

R^DS(on)1= 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A)

R^DS(on)2= 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)

• Low Ciss

Ciss = 860 pF TYP.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings

ꢀ 3

QUALITY GRADE

Standard

1.4 ±±.ꢀ

±.5 ±±.1

1.4 ±±.ꢀ

±.5 ±±.1

Pleasereferto"QualitygradeonNECSemiconductorDevices"(Document

number IEI-1209) published by NEC Corporation to know the

specification of quality grade on the devices and its recommended

±.5 ±±.1

applications.

1. Gate

ꢀ. Drain

3. Source

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

VDSS

MP-10 (ISOLATED TO-220)

VGSS

±20

±10

±40

1.8

I^D(DC)

I^D(pulse)

Drain

Drain Current (pulse)*

Total Power Dissipation (TA = 25 ˚C) PT

˚C

Channel Temperature

T^ch

Tstg

IAS

150

Body

Diode

Gate

Storage Temperature

–55 to +150 ˚C

Single Avalanche Current**

Single Avalanche Energy**

Gate Protection

E^AS

Diode

Source

PW ≤ 10 µs, Duty Cycle ≤ 1 %

** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

The information in this document is subject to change without notice.

Document No. TC-2494

(O. D. No. TC-8032)

Date Published November 1994

Printed in Japan

1994

12 3 4 5 6 7 8

中文翻译

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