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2SK2399_06 PDF预览

2SK2399_06

更新时间: 2024-02-02 10:30:16
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器电机驱动
页数 文件大小 规格书
6页 777K
描述
Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications

2SK2399_06 数据手册

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2SK2399  
2
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV)  
2SK2399  
Chopper Regulator, DC/DC Converter and Motor Drive  
Applications  
Unit: mm  
z 4 V gate drive  
z Low drainsource ON-resistance  
z High forward transfer admittance  
: R  
= 0.17 (typ.)  
DS (ON)  
: |Y | = 4.5 S (typ.)  
fs  
z Low leakage current : I  
= 100 μA (max) (V  
= 100 V)  
DSS  
DS  
z Enhancement mode : V = 0.8~2.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
100  
100  
±20  
5
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
V
GSS  
DC (Note 1)  
I
A
D
Drain current  
Pulse (Note 1)  
I
20  
A
JEDEC  
JEITA  
DP  
Drain power dissipation (Tc = 25°C)  
Single-pulse avalanche energy  
P
20  
W
D
AS  
AR  
SC-64  
2-7B1B  
E
180  
mJ  
TOSHIBA  
(Note 2)  
Weight: 0.36 g (typ.)  
Avalanche current  
I
5
2
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.)  
may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate reliability  
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.  
reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
6.25  
125  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (chc)  
th (cha)  
JEDEC  
JEITA  
Thermal resistance, channel to  
ambient  
R
TOSHIBA  
2-7J1B  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 25 V, T = 25°C (initial), L = 11.6 mH, R = 25 , I  
Weight: 0.36 g (typ.)  
V
DD  
= 5 A  
AR  
ch  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2006-11-20  

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