Datasheet > 2SK2394-7-TB-E

2SK2394-7-TB-E

更新时间： 2023-09-03 20:31:14

品牌	Logo	应用领域
安森美 - ONSEMI		放大器光电二极管晶体管
页数	文件大小	规格书
6页	155K
描述
N 沟道 JFET，15V，6 至 32mA，38mS，CP

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中文翻译

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技术参数
数据手册
替代型号

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2SK2394-7-TB-E 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.24
Base Number Matches：	1

2SK2394-7-TB-E 数据手册

DATA SHEET

www.onsemi.com

N-Channel JFET

15 V, 6 to 32 mA, 38 mS, CP

2SK2394

SC−59−3

318BJ

ELECTRICAL CONNECTION

Features

1: Source

2: Drain

3: Gate

• Large ⎪yfs⎪

• Small C

iss

• Small−Sized Package Permitting 2SK2394−Applied Sets to be Made

Small Slim

• Ultralow Noise Figure

• This is a Pb−Free Device

MARKING DIAGRAM

Applications

• AM Tuner RF Amplifier

• Low−Noise Amplifier

ABSOLUTE MAXIMUM RATINGS at T = 25°C

Symbol

Parameter

Drain−to−Source Voltage

Gate−to−Drain Voltage

Gate Current

Value

Unit

YJx

= Specific Device Code

x = 6 or 7

−15

DSX

GDS

°C

ORDERING INFORMATION

Drain Current

†

Device

2SK2394−6−TB−E

Package

Shipping

3000 /

Tape & Reel

Allowable Power Dissipation

Junction Temperature

Storage Temperature

200

SC−59−3

(Pb−Free)

150

stg

−55 to +150

°C

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

March, 2022 − Rev. 3

2SK2394/D

12 3 4 5 6

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2SK2394-7-TB-E 替代型号

型号	品牌	替代类型	描述	数据表
2SK2394-7-TB-E	SANYO	功能相似	N-Channel Junction Silicon FET Low-Noise HF Amplifi er Applications

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