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2SK2247 PDF预览

2SK2247

更新时间: 2024-01-10 19:53:40
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
9页 152K
描述
Silicon N-Channel MOS FET

2SK2247 技术参数

生命周期:Not Recommended包装说明:UPAK-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.46
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):2 A
最大漏源导通电阻:0.45 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON

2SK2247 数据手册

 浏览型号2SK2247的Datasheet PDF文件第2页浏览型号2SK2247的Datasheet PDF文件第3页浏览型号2SK2247的Datasheet PDF文件第4页浏览型号2SK2247的Datasheet PDF文件第5页浏览型号2SK2247的Datasheet PDF文件第6页浏览型号2SK2247的Datasheet PDF文件第7页 
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank yyour understanding. Except for our corporate trademark, logo and  
corporate statement, no tsoever have been made to the contents of the document, and  
these changes do ntion to the contents of the document itself.  
RePage: http://www.renesas.com  
Renesas Technology Corp.  
ustomer Support Dept.  
1, 2003  

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