生命周期: | Transferred | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.29 |
配置: | SINGLE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 2 A | 最大漏源导通电阻: | 0.45 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2247QYTR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal |
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2SK2247QYTR | RENESAS |
获取价格 |
2A, 30V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET |
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2SK2247QYUL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal |
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2SK2247QYUL | RENESAS |
获取价格 |
2A, 30V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET |
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2SK2247QYUR | RENESAS |
获取价格 |
2A, 30V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET |
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2SK2247QYUR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal |
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2SK2248-01 | ETC |
获取价格 |
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2SK2248-01L | FUJI |
获取价格 |
N-channel MOS-FET |
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2SK2248-01S | FUJI |
获取价格 |
N-channel MOS-FET |
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2SK2249 | ETC |
获取价格 |
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