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2SK2233(F) PDF预览

2SK2233(F)

更新时间： 2024-10-02 13:04:27
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体转换器稳压器晶体管功率场效应晶体管开关脉冲电机驱动DC-DC转换器局域网
页数 文件大小 规格书
6页 432K
描述
MOSFET N-CH 60V 45A 2-16C1B

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中文翻译

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2SK2233(F) 技术参数

是否Rohs认证：符合生命周期：End Of Life
包装说明：,Reach Compliance Code：unknown
风险等级：5.72Is Samacsys：N
配置：Single最大漏极电流 (Abs) (ID)：45 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：100 W子类别：FET General Purpose Power
表面贴装：NOBase Number Matches：1

2SK2233(F) 数据手册

 浏览型号2SK2233(F)的Datasheet PDF文件第2页浏览型号2SK2233(F)的Datasheet PDF文件第3页浏览型号2SK2233(F)的Datasheet PDF文件第4页浏览型号2SK2233(F)的Datasheet PDF文件第5页浏览型号2SK2233(F)的Datasheet PDF文件第6页 
2SK2233  
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L –π−MOSV)  
2SK2233  
Chopper Regulator, DC−DC Converter and Motor Drive  
Applications  
Unit: mm  
z 4-V gate drive  
z Low drain−source ON resistance  
z High forward transfer admittance  
: R  
= 0.022 Ω (typ.)  
DS (ON)  
: |Y | = 27 S (typ.)  
fs  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 60 V)  
DSS  
DS  
: V = 0.8 to 2.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain−source voltage  
Symbol  
Rating  
Unit  
V
60  
60  
V
V
DSS  
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±20  
45  
V
GSS  
1. GATE  
DC (Note 1)  
I
A
D
2. DRAIN (HEAT SINK)  
3. SOURCE  
Drain current  
Pulse (Note 1)  
I
180  
100  
A
DP  
Drain power dissipation (Tc = 25°C)  
Single pulse avalanche energy  
P
W
D
AS  
AR  
JEDEC  
JEITA  
―
E
246  
mJ  
(Note 2)  
―
Avalanche current  
I
45  
10  
A
TOSHIBA  
2-16C1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 4.6 g (typ.)  
T
ch  
150  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
1.25  
50  
°C / W  
°C / W  
th (ch−c)  
R
th (ch−a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 25 V, T = 25°C (initial), L = 165 μH, R = 25 Ω, I = 45 A  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2009-09-29  
123456

中文翻译

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