生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
雪崩能效等级(Eas): | 180 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE | 最小漏源击穿电压: | 450 V |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 1.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 35 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2241 | SANKEN |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 450V, 0.95ohm, 1-Element, N-Channel, Silicon, Meta |
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2SK2242 | SANKEN |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 450V, 0.95ohm, 1-Element, N-Channel, Silicon, Meta |
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2SK2243 | SANKEN |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 450V, 0.75ohm, 1-Element, N-Channel, Silicon, Met |
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2SK2244 | SANKEN |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 450V, 0.55ohm, 1-Element, N-Channel, Silicon, Met |
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2SK2247 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET |
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2SK2247 | RENESAS |
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Silicon N-Channel MOS FET |
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2SK2247QY | RENESAS |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal |
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2SK2247QYTL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal |
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2SK2247QYTL | RENESAS |
获取价格 |
2A, 30V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET |
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2SK2247QYTR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal |
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