生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 250 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE |
最小漏源击穿电压: | 450 V | 最大漏极电流 (ID): | 7 A |
最大漏源导通电阻: | 0.95 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 70 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2243 | SANKEN |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 450V, 0.75ohm, 1-Element, N-Channel, Silicon, Met |
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2SK2244 | SANKEN |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 450V, 0.55ohm, 1-Element, N-Channel, Silicon, Met |
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2SK2247 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET |
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2SK2247 | RENESAS |
获取价格 |
Silicon N-Channel MOS FET |
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2SK2247QY | RENESAS |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal |
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2SK2247QYTL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal |
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2SK2247QYTL | RENESAS |
获取价格 |
2A, 30V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET |
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2SK2247QYTR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal |
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2SK2247QYTR | RENESAS |
获取价格 |
2A, 30V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET |
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2SK2247QYUL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal |
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