生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 8 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 100 W | 子类别: | FET General Purpose Power |
表面贴装: | NO |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2211 | PANASONIC |
获取价格 |
Silicon N-Channel MOS FET |
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2SK2211 | KEXIN |
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Silicon N-Channel MOSFET |
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2SK2211 | TYSEMI |
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Low ON-resistance RDS(ON) High-speed switching Drain to source voltage VDSS 30 V |
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2SK2211G | PANASONIC |
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Small Signal Field-Effect Transistor, 1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-o |
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2SK2212 | RENESAS |
获取价格 |
Silicon N Channel MOS FET |
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2SK2212 | HITACHI |
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Silicon N-Channel MOS FET |
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2SK2212-E | RENESAS |
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Silicon N Channel MOS FET |
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2SK2213-01 | ETC |
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|
2SK2213-01L | FUJI |
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N-channel MOS-FET |
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2SK2213-01S | FUJI |
获取价格 |
N-channel MOS-FET |
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